Powerex's dual IGBT modules are designed for use in switching applications. Each module consists of two IGBT transistors in a half-bridge configuration with each transistor having a reverse-connected, super-fast recovery, free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
The 6th generation S-Series IGBTs are improved versions of the earlier 5th generation A-Series and NF-Series IGBTs in compatible packages. They use 6th generation Carrier Stored Trench-Gate Bipolar Transistor (CSTBT) silicon for significant performance improvement.