MAAP-015030 GaAs MMIC Power Amplifier

By MacomTechnology Solutions 86

MAAP-015030 GaAs MMIC Power Amplifier

Macom's MAAP-015030 two-stage 8.5 to 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 41 dBm, a large-signal gain of 21 dB and 40% power added efficiency. The power amplifier can be biased using a direct gate voltage or using an on-chip gate bias circuit providing an excellent bare die solution for high-power X-Band applications.

Features
  • 21 dB large-signal gain
  • 41 dBm saturated pulsed output power
  • 40% power added efficiency
  • On-chip gate bias circuit
  • 100% on-wafer DC and RF power tested
  • 100% visual inspection to MIL-STD-833
  • Bare die

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