By Toshiba Semiconductor and Storage 91
Toshiba’s SOT-23F MOSFET lineup are designed for semi-power applications. They provide a simple FET switch functionality for power rails up to 40 V, at currents up to 6 A.
Toshiba’s UMOSVII-H MOSFET process allows a significant reduction in gate switch charge and on-state resistance (RDS(ON)), resulting in great power efficiency. Toshiba’s SOT-23F package (2.9 mm x 2.4 mm) offers superior power dissipation performance and can be installed in the industry-standard SOT-23 package land pattern.
Applications