By EPC 66
EPC's development board, measuring 11 mm x 12 mm, contains two enhancement mode (eGaN®) field effect transistors (FETs) arranged in a half bridge configuration with an on-board Texas Instruments LM5113 gate drive. The purpose of these development boards is to simplify the evaluation process by optimizing the layout and to include all the critical components on a single board that can be easily connected into any existing converter.
The addition of heat-sinking and forced air cooling can significantly increase the current rating of these devices, but care must be taken to not exceed the absolute maximum die temperature of 150°C.
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