EPC2050 Power Transistor

By EPC 110

EPC2050 Power Transistor

EPC’s 350 V GaN transistor, EPC2050 has a maximum RDS(on) of 65 mΩ and a 26 A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to 48 V output LLC converter for telecom or server power supplies.

The EPC2050 is just 1.95 mm x 1.95 mm (3.72 mm2). It offers high performance in a small footprint. Given the tiny size of the EPC2050, a highly efficient half bridge with gate driver occupies five times less area than a comparable silicon solution. Despite the small size of the chip-scale packaging, the EPC2050 handles thermal conditions more efficiently than plastic packaged MOSFETs.

Features    
  • High voltage GaN
    • 350 V, 65 mΩ, 26 A
  • Small footprint
    • Low inductance, extremely small, 1.95 mm x 1.95 mm BGA surface-mount passivated die
Applications  
  • Multi-level AC-DC conversion
  • EV charging
  • Solar power inverters
  • Motors drives
  • Wireless power Class-E amplifiers
  • LED lighting
  • Medical imaging

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