The industrial and extended test devices are high-speed DDR3/3L synchronous DRAMs vetted with Insignis’ proprietary extended test flow to mitigate against early life failures, ensuring premium quality and long-term reliability for industrial use. The chip is designed to comply with all DDR3L DRAM key features, including full backward compatibility to DDR3, with the only exception being the required voltage between the 1 Gb DDR3 part and the 1 Gb DDR3L part. All the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pair in a source synchronous fashion.

All 2 Gb DDR3 parts are covered by 2 Gb DDR3L. The 2 Gb DDR3 and DDR3L parts operate with a single +1.35 V to 0.067 V/+0.1 V power supply. The 1 Gb DDR3 parts have a required voltage of 1.5 V, whereas 1 Gb DDR3L parts have a required voltage of 1.35 V. All parts are available in BGA packages.