NV6117 650 V Single GaNFast™ Power IC (120 mΩ)

By Navitas Semiconductor 128

NV6117 650 V Single GaNFast™ Power IC (120 mΩ)

Navitas' NV6117 is a 650 V, GaNFast power IC optimized for high frequency, soft-switching topologies. Monolithic integration of a field-effect transistor (FET), drive, and logic creates an easy-to-use, digital-input, power-output, high-performance building block enabling designers to create an ultra-fast, ultra-small, and ultra-efficient integrated powertrain.

The ultra-high dV/dt immunity, high-speed integrated drive, and industry-standard low-profile, low-inductance, 5 mm x 6 mm SMT QFN package allow designers to exploit Navitas' gallium nitride (GaN) technology with simple, quick, and dependable solutions for breakthrough power density and efficiency. These ICs extend the capabilities of traditional topologies including flyback, half-bridge, resonant, and more to MHz+ enabling the commercial introduction of breakthrough designs.

  • Monolithically-integrated gate drive
  • Wide logic input range with hysteresis
  • 5 V/15 V input compatible
  • Wide VCC range: 10 V to 30 V
  • Programmable turn-on dV/dt
  • 200 V/ns dV/dt immunity
  • 650 V eMode GaN FET
  • Low 120 mΩ resistance
  • 2 MHz operation
  • Small, low profile SMT QFN package
    • 5 mm x 6 mm footprint, 0.85 mm profile
    • Minimized package inductance
  • RoHS, Pb-free, and REACH compliant
  • AC/DC, DC/DC, and DC/AC
  • Buck, boost, half bridge, and full bridge
  • Active clamp flybacks, LLC resonant, and Class D
  • Mobile fast chargers and adapters
  • Notebook adapters
  • LED lighting and solar micro-inverters
  • TV monitors and wireless power
  • Servers, telecom, and networking SMPS