Silicon Carbide (SiC) MOSFET - LSIC1MO170E1000

By Littelfuse Inc 112

Silicon Carbide (SiC) MOSFET - LSIC1MO170E1000

The LSIC1MO170E1000 SiC MOSFET from Littelfuse offers a rewarding alternative to traditional Si-based power transistor devices. The MOSFET device structure enables lower per-cycle switching losses and improved light-load efficiency when compared to similarly rated insulated-gate bipolar transistors (IGBTs).

This SiC MOSFET outclasses its Si MOSFET counterparts in terms of blocking voltage, specific on-resistance, and junction capacitances due to its inherent material properties.

State of SiC MOSFET

  • 1,700 V, 1 Ω in a TO-247-3L package
  • Low-gate resistance for high-frequency switching
  • Normally-off operation at all temperatures
  • Increased power density
  • Decreased cooling requirements
  • Lower per-cycle switching losses
  • Optimized for high-frequency, high-efficiency applications
  • Extremely low-gate charge and output capacitance
  • Improved light-load efficiency
  • Potentially lower system-level costs
  • Electric vehicle (EV) infrastructure
  • Industrial machinery
  • Switch-mode/uninterruptable power supplies (UPS)
  • Data centers and cloud infrastructure
  • Off-board EV chargers
  • Motor drives
  • High-voltage DC/DC converters
  • Solar inverters