By ROHM Semiconductor 33
ROHM’s MR45V100A 1 Mbit ferroelectric random-access memory (FeRAM) designed for applications such as smart meters, measurement equipment, medical equipment, and financial terminals that require fast and frequent acquisition of log data and/or fast data backup in emergencies. Compared to other non-volatile memories such as EEPROM and Flash, FeRAM features faster data rewrite, higher rewrite durability, and lower power consumption.
The MR45V100A provides high-speed 40 MHz operation over a wide supply voltage range from 1.8 V to 3.6 V via SPI bus. The large 1 Mbit capacity ensures stable, high-speed performance even during sudden voltage drops in unstable power environments, contributing to improved reliability when used for high-speed backup in installed equipment. Alternatively, the MR44V100A features an I2C bus I/F suitable for applications that do not require high-speed operation.
Additionally, with mobile applications in mind, the standby mode has been improved to curb the rise in power consumption that occurs when increasing memory capacity and a sleep mode has been implemented to reduce power consumption even further. This results in a low 10 µA (ave.) standby current and sleep current of just 0.1 µA (ave.), making them ideal for portable devices and handy terminals, such as approval terminals and data loggers, that place an importance on battery drive time.