IS34ML/MW Single-Level Cell (SLC) NAND Flash

By ISSI, Integrated Silicon Solution Inc. 101

IS34ML/MW Single-Level Cell (SLC) NAND Flash

ISSI’s IS34ML and IS34MW series NAND products complement serial and parallel NOR offerings for the embedded market. The ML (3.0 V) series and the MW (1.8 V) series SLC NAND devices are available in densities of 1 Gb, 2 Gb, and 4 Gb.

The SLC NAND Flash memory devices are well-suited for performance-oriented applications where high reliability is needed. The SLC stores 1-bit of data per memory cell and offers fast read and write capabilities. These products work with systems that require 1- or 4-bit ECC algorithms and offer 100 K cycles of endurance with 10 years of retention.

  • Supply voltage:
    • VCC: 2.7 V to 3.6 V (IS34ML series)
    • VCC: 1.7 V to 1.95 V (IS34MW series)
  • Flexible x8 or x16 options
  • Cost-effective uniform blocks
  • Block erase times: 3 ms (typ.)
  • Automatic read operations
  • Hardware data protection
  • 100 K program/erase cycles
  • Data retention: 10 years
  • Supports 1- or 4-bit ECC per 512 B
  • Industrial temperature: -40°C to +85°C
  • Extended temperature: -40°C to +105°C
  • Industry standard packages: 48-pin TSOP and 63-pin (9 mm x 11 mm BGA)
  • Automotive infotainment
  • Instrument clusters
  • ADAS
  • Industrial meters
  • Industrial sensors
  • M2M
  • POS terminals
  • Smart metering
  • Game consoles
  • Printers
  • Digital cameras
  • Digital TVs
  • Set-top boxes