TSMxxxNB0x 40 V and 60 V N-Channel MOSFETs

By Taiwan Semiconductor 320

TSMxxxNB0x 40 V and 60 V N-Channel MOSFETs

TSC's 40 V and 60 V N-Channel MOSFET families feature a junction temperature rated to 175°C suited for high-temperature environment applications. These devices offer logic or standard gate threshold voltage levels and a wide range of drain-source on-state resistance (RDS(ON)) levels for flexible and robust power switching designs. Gate-drain charge/gate-source charge (Qgd/Qgs) and the reverse recovery charge (Qrr) parameters have been optimized to improve figure of merit and reduce EMI, and offer higher surge current capability during cold load start-up and in-rush. The MOSFETs are packaged in a small form factor PDFN56 package for improved power density in application.

  • +175°C operating junction temperature
  • 100% Rg and UIS tested
  • Low RDS(ON) to minimize conductive losses
  • Low gate charge for fast power switching
  • Logic level
  • RoHS compliant and in accordance to WEEE 2002/96/EC
  • Halogen-free
  • Small PDFN56 package
  • BLDC motor controls
  • Battery power management
  • DC-DC converters
  • Secondary synchronous rectification