By Texas Instruments 229
Texas Instruments' LMG1210 is a 200 V, half-bridge MOSFET and gallium nitride field-effect transistor (GaN FET) driver designed for ultra-high frequency, high-efficiency applications that feature adjustable dead-time capability, ultra-small propagation delay, and 3.4 ns high-side/low-side matching to optimize system efficiency. The device features an internal LDO which ensures a gate-drive voltage of 5 V regardless of the supply voltage.
To enable the best performance in a variety of applications, the LMG1210 allows the designer to choose the optimal bootstrap diode to charge the high-side bootstrap capacitor. An internal switch turns the bootstrap diode off when the low side is off, effectively preventing the high-side bootstrap from overcharging and minimizing the reverse recovery charge. Additional parasitic capacitance across the GaN FET is minimized to less than 1 pF to reduce additional switching losses.
The LMG1210 features two control input modes including independent input mode (IIM) and PWM mode. In IIM each of the outputs is independently controlled by a dedicated input. In PWM mode the two complementary output signals are generated from a single input and the user can adjust the dead time from 0 ns to 20 ns for each edge. The LMG1210 operates over a wide temperature range from -40°C to +125°C and is offered in a low-inductance WQFN package.