Isolated Gate Driver Plus High-Voltage GaN FET Ref

By Silicon Labs 74

Isolated Gate Driver Plus High-Voltage GaN FET Ref

Silicon Labs' isolation technology simplifies design and offers the industry's best timing characteristics, highest reliability, and lowest emissions. Customers rely on Silicon Labs solutions to achieve higher system efficiency, higher noise immunity, improved safety, and a reduced footprint. These reference designs were developed to enable quick customer adoption and accelerated time-to-market.

Silicon Labs' partnership with Transphorm enables designers to take advantage of evaluation boards that simplify the use of high voltage GaN FETs. These evaluation boards, including one complete reference design [3.3 kW bridgeless totem-pole PFC (TDTTP3300-RD)], feature on-board gate drives and include all the critical components and layout for optimal switching performance. These design resources are used to demonstrate Transphorm’s GaN technology and performance.

  • High-noise immunity: >200 kV/µs
  • Low UVLO options
  • Industry-defining high-side/low-side drivers or dual drivers
  • Compact LGA/QFN packages or wide creepage (>8 mm) SOIC
  • Driver-side power status pin on isolated logic side
  • AEC-Q100 qualification
  • Solar inverters
  • Consumer and gaming PC power supplies
  • Uninterruptable power supplies (UPS)
  • Switch-mode power supplies
  • Datacenter power supplies
  • Broad industrial power
  • Automotive
    • On-board chargers (OBC)
    • DC-to-DC converters
    • DC-to-AC inverters