IPB60R060P7ATMA1

Mfr. #:: IPB60R060P7ATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET HIGH POWER_NEW
Lifecycle:: New from this manufacturer.
Datasheet:: IPB60R060P7ATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: IPB60R060P7ATMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 48 A

Rds On - Drain-Source Resistance:: 49 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 67 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 164 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Transistor Type:: 1 N-Channel

Brand:: Infineon Technologies

Fall Time:: 4 ns

Product Type:: MOSFET

Rise Time:: 12 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 79 ns

Typical Turn-On Delay Time:: 23 ns

Part # Aliases:: IPB60R060P7 SP001664882

Tags: IPB60R0, IPB60R, IPB60, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
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IPB60R060P7ATMA1 Description

***ure Electronics: Single N-Channel 600 V 60 mOhm 67 nC CoolMOS Power Mosfet - D2PAK

***et: CoolMOS P7 Power MOSFET High Power 60/65mΩ 600V D2-PAK

***nell: MOSFET, N-CH, 600V, 48A, TO-263

***ark: Mosfet, N-Ch, 600V, 48A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.049Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

IPB60R060P7ATMA1 More Information

600V CoolMOS P7 MOSFETs: Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

Market price

Part #	Mfg.	Description	Stock	Price
IPB60R060P7ATMA1 DISTI # V72:2272_18787574	Infineon Technologies AG	HIGH POWER_NEW	890	500:$3.9910 250:$4.2699 100:$4.6830 25:$4.8540 10:$5.3930 1:$6.9707
IPB60R060P7ATMA1 DISTI # V36:1790_18787574	Infineon Technologies AG	HIGH POWER_NEW	0	1000000:$2.8090 500000:$2.8120 100000:$3.0510 10000:$3.4740 1000:$3.5450
IPB60R060P7ATMA1 DISTI # IPB60R060P7ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1692In Stock	500:$4.3294 100:$5.0857 10:$6.2070 1:$6.9100
IPB60R060P7ATMA1 DISTI # IPB60R060P7ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1692In Stock	500:$4.3294 100:$5.0857 10:$6.2070 1:$6.9100
IPB60R060P7ATMA1 DISTI # IPB60R060P7ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	2000:$3.3677 1000:$3.5449
IPB60R060P7ATMA1 DISTI # 33704475	Infineon Technologies AG	HIGH POWER_NEW	1000	1000:$5.2188
IPB60R060P7ATMA1 DISTI # 32882183	Infineon Technologies AG	HIGH POWER_NEW	890	2:$6.9707
IPB60R060P7ATMA1 DISTI # IPB60R060P7	Infineon Technologies AG	CoolMOS P7 Power MOSFET High Power 60/65mΩ 600V D2-PAK (Alt: IPB60R060P7) RoHS: Compliant Min Qty: 1000	Asia - 400	50000:$3.4949 25000:$3.5463 10000:$3.5993 5000:$3.6538 3000:$3.7680 2000:$3.8895 1000:$4.0192
IPB60R060P7ATMA1 DISTI # IPB60R060P7ATMA1	Infineon Technologies AG	CoolMOS P7 Power MOSFET High Power 60/65mΩ 600V D2-PAK - Tape and Reel (Alt: IPB60R060P7ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$2.9900 6000:$3.0900 4000:$3.1900 2000:$3.2900 1000:$3.3900
IPB60R060P7ATMA1 DISTI # SP001664882	Infineon Technologies AG	CoolMOS P7 Power MOSFET High Power 60/65mΩ 600V D2-PAK (Alt: SP001664882) RoHS: Compliant Min Qty: 1000	Europe - 0	10000:€2.5900 6000:€2.7900 4000:€2.9900 2000:€3.1900 1000:€3.2900
IPB60R060P7ATMA1 DISTI # 49AC7993	Infineon Technologies AG	MOSFET, N-CH, 600V, 48A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:48A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.049ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	150	500:$4.0400 250:$4.5000 100:$4.7500 50:$4.9900 25:$5.2300 10:$5.4700 1:$6.4400
IPB60R060P7ATMA1 DISTI # 726-IPB60R060P7ATMA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	592	1:$6.3800 10:$5.4200 100:$4.7000 250:$4.4600 500:$4.0000 1000:$3.3700 2000:$3.2000
IPB60R060P7ATMA1	Infineon Technologies AG	Single N-Channel 600 V 60 mOhm 67 nC CoolMOS Power Mosfet - D2PAK RoHS: Not Compliant	1000Reel	1000:$3.1800
IPB60R060P7ATMA1 DISTI # 2841641	Infineon Technologies AG	MOSFET, N-CH, 600V, 48A, TO-263 RoHS: Compliant	146	1000:$4.8300 500:$4.9300 250:$5.1900 100:$5.4900 10:$6.2100 1:$6.6400
IPB60R060P7ATMA1 DISTI # 2841641	Infineon Technologies AG	MOSFET, N-CH, 600V, 48A, TO-263	406	500:£3.1100 250:£3.4700 100:£3.6500 10:£4.2100 1:£5.4700
IPB60R060P7ATMA1 DISTI # XSFP00000158368	Infineon Technologies AG	Single N-Channel 600 V 60 mOhm 67 nCCoolMOSPowerMosfet - D2PAK RoHS: Compliant	2000 in Stock0 on Order	2000:$4.2400 1000:$4.5400

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Availability

Stock:: 572
On Order:: 2555
Enter Quantity:

Current price of IPB60R060P7ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$6.38~~; ~~$6.38~~

10: ~~$5.42~~; ~~$54.20~~

100: ~~$4.70~~; ~~$470.00~~

250: ~~$4.46~~; ~~$1 115.00~~

500: ~~$4.00~~; ~~$2 000.00~~

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IPB60R060P7ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes