BSO612CV

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

N

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SO-8

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel, P-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

3 A

Rds On - Drain-Source Resistance:

120 mOhms, 300 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2 W

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Height:

1.75 mm

Length:

4.9 mm

Transistor Type:

1 N-Channel, 1 P-Channel

Type:

SIPMOS Small Signal Transistor

Width:

3.9 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

4 S / 2 S

Fall Time:

30 ns, 95 ns

Product Type:

MOSFET

Rise Time:

35 ns, 60 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

25 ns, 145 ns

Typical Turn-On Delay Time:

12 ns, 15 ns

Unit Weight:

0.019048 oz

Tags

BSO612, BSO61, BSO6, BSO