FJN3310RTA

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

Bipolar Transistors - Pre-Biased

RoHS:

Y

Configuration:

Single

Transistor Polarity:

NPN

Typical Input Resistor:

10 kOhms

Mounting Style:

Through Hole

Package / Case:

TO-92-3 Kinked Lead

DC Collector/Base Gain hfe Min:

100

Collector- Emitter Voltage VCEO Max:

40 V

Continuous Collector Current:

0.1 A

Peak DC Collector Current:

100 mA

Pd - Power Dissipation:

300 mW

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Packaging:

Ammo Pack

DC Current Gain hFE Max:

600

Emitter- Base Voltage VEBO:

5 V

Height:

5.33 mm

Length:

5.2 mm

Type:

NPN Epitaxial Silicon Transistor

Width:

4.19 mm

Brand:

ON Semiconductor / Fairchild

Product Type:

BJTs - Bipolar Transistors - Pre-Biased

Factory Pack Quantity:

2000

Subcategory:

Transistors

Part # Aliases:

FJN3310RTA_NL

Unit Weight:

0.010088 oz

Tags

FJN331, FJN33, FJN3, FJN