OMO ElectronicOMO Electronic
Expand menu
こんにちは、サインインマイアカウント
0 ショッピングカート

MRF6V2300NBR1

MRF6V2300NBR1
Mfr. #:
MRF6V2300NBR1
メーカー:
NXP / Freescale
説明:
RF MOSFET Transistors VHV6 300W TO272WB4N
ライフサイクル:
メーカー新製品
データシート:
MRF6V2300NBR1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー：
NXP
製品カテゴリ：
RFMOSFETトランジスタ
JBoss：
E
トランジスタの極性：
Nチャネル
テクノロジー：
Si
Vds-ドレイン-ソース間降伏電圧：
110 V
最低動作温度：
- 65 C
最高作動温度：
+ 150 C
取り付けスタイル：
SMD / SMT
パッケージ/ケース：
TO-272-4
包装：
リール
構成：
シングルデュアルドレインデュアルゲート
高さ：
2.64 mm
長さ：
23.67 mm
シリーズ：
MRF6V2300N
タイプ：
RFパワーMOSFET
幅：
9.07 mm
ブランド：
NXP /フリースケール
チャネルモード：
強化
感湿性：
はい
製品タイプ：
RFMOSFETトランジスタ
ファクトリーパックの数量：
500
サブカテゴリ：
MOSFET
Vgs-ゲート-ソース間電圧：
- 0.5 V, 10 V
パーツ番号エイリアス：
935309671528
単位重量：
0.067412 oz
Tags
MRF6V2300NB, MRF6V23, MRF6V2, MRF6V, MRF6, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V
***W
RF Power Transistor,10 to 600 MHz, 300 W, Typ Gain in dB is 25.5 @ 220 MHz, 50 V, LDMOS, SOT1735
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.63V; Package/Case:TO-272 ;RoHS Compliant: Yes
***nell
RF, MOSFET, N, 600MHZ, 300W, 4TO272; Drain Source Voltage Vds: 100V; Continuous Drain Current Id: 150mA; Power Dissipation Pd: 300W; Operating Frequency Min: 10MHz; Operating Frequency Max: 600MHz; RF Transistor Case: TO-272;
***W
RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F
***nell
TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***escale Semiconductor
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V
*** Electronics
FREESCALE SEMICONDUCTOR MRF6V4300NBR5 RF MOSFET, N CHANNEL, 110V, TO-272
*** Electronic Components
RF MOSFET Transistors VHV6 300W Latrl N-Ch SE Broadband MOSFET
***or
RF POWER FIELD-EFFECT TRANSISTOR
***ark
RF MOSFET, N CHANNEL, 110V, TO-272; Transistor Type:RF FET; Drain Source Voltage, Vds:110V; RF Transistor Case:TO-272; Gain:22dB; Gate-Source Voltage:10V; Operating Frequency Max:450MHz; Output Power, Pout:300W
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F
***et
Transistor RF FET N-CH 110V 10MHz to 450MHz 2-Pin TO-272 T/R
*** Electronic Components
RF MOSFET Transistors VHV6 10W TO272-2N
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:50µA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.68V; Package/Case:TO-272 ;RoHS Compliant: Yes
***(Formerly Allied Electronics)
IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223
***eco
Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3
*** Source Electronics
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223
***nsix Microsemi
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***hard Electronics
Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No
***ment14 APAC
MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***ical
Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R
***ment14 APAC
MOSFET, N-CH, 100V, 4.3A, TO-252AA
*** Services
CoC and 2-years warranty / RFQ for pricing
***S
French Electronic Distributor since 1988
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No
モデル メーカー 説明 ストック 価格
MRF6V2300NBR1
DISTI # V72:2272_07204050		NXP SemiconductorsTrans RF MOSFET N-CH 110V 5-Pin TO-272 W T/R
RoHS: Compliant		498
  • 75000:$107.3300
  • 30000:$108.5300
  • 15000:$109.7200
  • 6000:$110.9200
  • 3000:$112.1200
  • 1000:$113.3200
  • 500:$114.5200
  • 250:$114.6400
  • 100:$117.1500
  • 50:$123.7700
  • 25:$124.9500
  • 10:$127.5300
  • 1:$133.6200
MRF6V2300NBR1
DISTI # MRF6V2300NBR1CT-ND		NXP SemiconductorsFET RF 110V 220MHZ TO-272-4
RoHS: Not compliant
Min Qty: 1
Container: Cut Tape (CT)		115In Stock
  • 10:$129.5280
  • 1:$135.9600
MRF6V2300NBR1
DISTI # MRF6V2300NBR1TR-ND		NXP SemiconductorsFET RF 110V 220MHZ TO-272-4
RoHS: Not compliant
Min Qty: 500
Container: Tape & Reel (TR)		Limited Supply - Call
    MRF6V2300NBR1
    DISTI # MRF6V2300NBR1DKR-ND    		NXP SemiconductorsFET RF 110V 220MHZ TO-272-4
    RoHS: Not compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      MRF6V2300NBR1
      DISTI # 31012206      		NXP SemiconductorsTrans RF MOSFET N-CH 110V 5-Pin TO-272 W T/R
      RoHS: Compliant      		498
      • 250:$114.6400
      • 100:$117.1500
      • 50:$123.7700
      • 25:$124.9500
      • 10:$127.5300
      • 1:$133.6200
      MRF6V2300NBR1
      DISTI # 47M2189      		NXP SemiconductorsRF MOSFET, N CHANNEL, 110V, TO-272, FULL REEL,Drain Source Voltage Vds:110V,Continuous Drain Current Id:2.5mA,Power Dissipation Pd:300W,Operating Frequency Min:10MHz,Operating Frequency Max:600MHz,RF Transistor Case:TO-272 RoHS Compliant: Yes0
      • 1:$115.7700
      • 10:$111.1900
      • 25:$104.6500
      • 100:$104.6500
      • 500:$104.6500
      MRF6V2300NBR1
      DISTI # 841-MRF6V2300NBR1      		NXP SemiconductorsRF MOSFET Transistors VHV6 300W TO272WB4N
      RoHS: Compliant      		137
      • 1:$142.4100
      • 5:$139.6400
      • 10:$135.0400
      • 25:$129.3200
      • 50:$127.5400
      • 100:$118.6200
      • 250:$115.9500
      MRF6V2300NBR1Freescale SemiconductorRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-272
      RoHS: Compliant      		157
      • 1000:$117.3600
      • 500:$123.5300
      • 100:$128.6100
      • 25:$134.1200
      • 1:$144.4400
      MRF6V2300NBR1
      DISTI # MRF6V2300NBR1      		NXP SemiconductorsRF POWER TRANSISTOR
      RoHS: Compliant      		5
        MRF6V2300NBR1
        DISTI # C1S537101497962        		NXP SemiconductorsTrans RF MOSFET N-CH 110V 5-Pin TO-272 W T/R
        RoHS: Compliant        		498
        • 100:$117.1500
        • 50:$123.7700
        • 25:$124.9500
        • 10:$127.5300
        • 1:$133.6200
        画像 モデル 説明
        MRF151G

        Mfr.#: MRF151G

        OMO.#: OMO-MRF151G

        		 RF MOSFET Transistors 5-175MHz 300Watts 50Volt Gain 14dB
        MRFE6VP61K25HR6

        Mfr.#: MRFE6VP61K25HR6

        OMO.#: OMO-MRFE6VP61K25HR6

        		 RF MOSFET Transistors VHV6 1.25KW ISM NI1230H
        MRF6V2010NR1

        Mfr.#: MRF6V2010NR1

        OMO.#: OMO-MRF6V2010NR1

        		 RF MOSFET Transistors VHV6 10W TO270-2N
        MRF134

        Mfr.#: MRF134

        OMO.#: OMO-MRF134

        		 RF MOSFET Transistors 5-400MHz 5 Watts 28Volt Gain 11dB
        MRFE6VP5600HR6

        Mfr.#: MRFE6VP5600HR6

        OMO.#: OMO-MRFE6VP5600HR6

        		 RF MOSFET Transistors VHV6 600W 50V NI1230H
        SFH620A-1

        Mfr.#: SFH620A-1

        OMO.#: OMO-SFH620A-1

        		 Transistor Output Optocouplers Phototransistor Out Single CTR 40-125%
        SFH620A-1

        Mfr.#: SFH620A-1

        OMO.#: OMO-SFH620A-1-VISHAY-SEMI-OPTO

        		 Transistor Output Optocouplers Phototransistor Out Single CTR 40-125%
        BAS3010A03WE6327HTSA1

        Mfr.#: BAS3010A03WE6327HTSA1

        OMO.#: OMO-BAS3010A03WE6327HTSA1-INFINEON-TECHNOLOGIES

        		 Schottky Diodes & Rectifiers Medium Power IF Diode
        232PTC9

        Mfr.#: 232PTC9

        OMO.#: OMO-232PTC9-1190

        		 ブランドニューオリジナル
        CRE1S2412SC

        Mfr.#: CRE1S2412SC

        OMO.#: OMO-CRE1S2412SC-MURATA-POWER-SOLUTIONS

        		 DC DC CONVERTER 12V 1W
        可用性
        ストック:
        93
        注文中:
        2076
        数量を入力してください:
        MRF6V2300NBR1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
        皮切りに
        最新の製品
        • TEA172x GreenChip Low-Power SMSP Controllers
          TEA172x GreenChip Low-Power SMSP Controllers
          NXP’s TEA172x family is a series of small, low-cost module switched mode power supply (SMPS) that are tailored for low-power applications up to 5 W or 11 W.
        • NTAG I²C Plus NFC Tag Solution
          NTAG I²C Plus NFC Tag Solution
          NXP's NTAG I²C Plus NFC Tag Solution is designed to be the perfect enabler for NFC in home-automation and consumer applications. This feature-packed, next-generation connected NFC tag is
        • GreenChip SMPS Control IC
          GreenChip SMPS Control IC
          NXP's TEA1832TS is a low-cost, switched-mode power supply (SMPS) controller IC intended for flyback topologies.
        • Compare MRF6V2300NBR1
          Compare MRF6V2300NBR1
          MRF6V2300NB vs MRF6V2300NBR1 vs MRF6V2300NBR5
        • QN9080SIP Module
          QN9080SIP Module
          NXP's QN9080SIP is an ultra-small module based on the QN9080 Bluetooth® MCU and NT3H2211 NTAG® that delivers industry-leading low-power consumption.
        • PCA9847PW 8-Channel Multiplexer
          PCA9847PW 8-Channel Multiplexer
          NXP's PCA9847 is an ultra-low-voltage, octal bidirectional translating multiplexer that can separate a heavily loaded I²C bus into separate bus segments.
        More Newest Products
        Top