SI7317DN-T1-GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PowerPAK-1212-8

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

150 V

Id - Continuous Drain Current:

2.8 A

Rds On - Drain-Source Resistance:

1.2 Ohms

Vgs th - Gate-Source Threshold Voltage:

2.5 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

6.5 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

19.8 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

TrenchFET

Packaging:

Reel

Height:

1.04 mm

Length:

3.3 mm

Series:

SI7

Transistor Type:

1 P-Channel

Width:

3.3 mm

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

3 S

Fall Time:

10 ns

Product Type:

MOSFET

Rise Time:

11 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

11 ns

Typical Turn-On Delay Time:

7 ns

Tags

SI73, SI7