FQA7N80C-F109

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-3PN-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

800 V

Id - Continuous Drain Current:

7 A

Rds On - Drain-Source Resistance:

1.9 Ohms

Vgs - Gate-Source Voltage:

30 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

198 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

QFET

Packaging:

Tube

Height:

20.1 mm

Length:

16.2 mm

Series:

FQA7N80C_F109

Transistor Type:

1 N-Channel

Width:

5 mm

Brand:

ON Semiconductor / Fairchild

Fall Time:

60 ns

Product Type:

MOSFET

Rise Time:

100 ns

Factory Pack Quantity:

450

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

50 ns

Typical Turn-On Delay Time:

35 ns

Part # Aliases:

FQA7N80C_F109

Unit Weight:

0.225789 oz

Tags

FQA7N80C-F, FQA7N80C, FQA7N8, FQA7N, FQA7, FQA