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FGH40N60SFTU

FGH40N60SFTU
Mfr. #:
FGH40N60SFTU
メーカー:
ON Semiconductor / Fairchild
説明:
IGBT Transistors N-CH / 40A 600V FS Planar
ライフサイクル:
メーカー新製品
データシート:
FGH40N60SFTU データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
FGH40N60SFTU 詳しくは
製品属性
属性値
メーカー：
オン・セミコンダクター
製品カテゴリ：
IGBTトランジスタ
JBoss：
Y
テクノロジー：
Si
パッケージ/ケース：
TO-247
取り付けスタイル：
スルーホール
構成：
独身
コレクター-エミッター電圧VCEOMax：
600 V
コレクター-エミッター飽和電圧：
2.3 V
最大ゲートエミッタ電圧：
20 V
25℃での連続コレクタ電流：
80 A
Pd-消費電力：
290 W
最低動作温度：
- 55 C
最高作動温度：
+ 150 C
シリーズ：
FGH40N60SF
包装：
チューブ
ブランド：
オン・セミコンダクター/フェアチャイルド
ゲートエミッタリーク電流：
400 nA
製品タイプ：
IGBTトランジスタ
ファクトリーパックの数量：
450
サブカテゴリ：
IGBT
単位重量：
0.225401 oz
Tags
FGH40N60SF, FGH40N60S, FGH40N60, FGH40N6, FGH40N, FGH40, FGH4, FGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***a
    S***a
    SG

    Items received in good condition, fast delivery received within a week. Have not tested yet.

    2019-05-15
    A***f
    A***f
    RU

    Finally waited for his order, delivery of 2,5 months, trash. The seller gets in touch.

    2019-06-14
***ical
Trans IGBT Chip N=-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube
***el Electronic
FAIRCHILD SEMICONDUCTOR FGH40N60SFTU IGBT Single Transistor, General Purpose, 80 A, 2.3 V, 290 W, 600 V, TO-247AB, 3 Pins
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W
***ure Electronics
FGH40N60UF Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247-3
***th Star Micro
Using Novel Field Stop IGBT Technology, Fairchild's new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.
***nell
IGBT, FIELD STOP, 600V, 40A, TO-247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***p One Stop Global
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW Series Ultra Fast Free Wheeling Diode Through Hole IGBT - TO-247-3
***nell
IGBT, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Te
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
***ical
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
***ure Electronics
IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
***(Formerly Allied Electronics)
IGBT Trench gate,600V 30A/100 deg,TO247
***ment14 APAC
Transistor, IGBT, 600V, 60A, TO-247;
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
***nell
IGBT, 600V, 80A, 175DEG C, 283W; Available until stocks are exhausted Alternative available
***ical
Trans IGBT Chip N-CH 600V 80A 283000mW 3-Pin(3+Tab) TO-247 Tube
*** Source Electronics
Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247
***ure Electronics
FGH40N60UFD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247
***-Wing Technology
FAIRCHILD SEMICONDUCTOR FGH40N60UFDTU IGBT Single Transistor, General Purpose, 80 A, 600 V, 290 W, 600 V, TO-247AB, 3 Pins
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,W DIODE,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W
***ical
Trans IGBT Chip N-CH 600V 90A 300000mW 3-Pin(3+Tab) TO-247 Tube
*** Electronics
ON SEMICONDUCTOR NGTB45N60S1WG IGBT Single Transistor, 90 A, 2 V, 300 W, 600 V, TO-247, 3 Pins
***r Electronics
Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, TO-247AD
***nell
IGBT, SINGLE, 600V, 90A, TO-247-3;
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
モデル メーカー 説明 ストック 価格
FGH40N60SFTU
DISTI # V99:2348_06359207		ON SemiconductorN-CH / 40A 600V FS PLANAR IGBT450
  • 5000:$2.0130
  • 2500:$2.0740
  • 1000:$2.1310
  • 500:$2.3300
  • 250:$2.3900
  • 100:$2.4850
  • 10:$3.2540
  • 1:$3.7370
FGH40N60SFTU
DISTI # FGH40N60SFTUFS-ND		ON SemiconductorIGBT 600V 80A 290W TO247
RoHS: Compliant
Min Qty: 450
Container: Tube		Temporarily Out of Stock
  • 450:$3.1748
FGH40N60SFTU
DISTI # 26630277		ON SemiconductorN-CH / 40A 600V FS PLANAR IGBT34200
  • 450:$2.2677
FGH40N60SFTU
DISTI # 25845321		ON SemiconductorN-CH / 40A 600V FS PLANAR IGBT450
  • 250:$2.3830
  • 100:$2.4770
  • 10:$3.2420
  • 3:$3.7220
FGH40N60SFTU
DISTI # 29731081		ON SemiconductorN-CH / 40A 600V FS PLANAR IGBT420
  • 900:$2.0914
  • 450:$2.1024
FGH40N60SFTU
DISTI # FGH40N60SFTU		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: FGH40N60SFTU)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 250
  • 450:$2.1900
  • 900:$2.0900
  • 1800:$2.0900
  • 2700:$1.9900
  • 4500:$1.9900
FGH40N60SFTU
DISTI # 41T0511		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Tube - Bulk (Alt: 41T0511)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$4.3300
  • 10:$3.6800
  • 25:$3.5200
  • 50:$3.3500
  • 100:$3.1900
  • 250:$3.0300
FGH40N60SFTU
DISTI # 41T0511		ON SemiconductorIGBT,N CHANNEL,600V,80A,TO247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):600V,Power Dissipation Pd:290W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:-RoHS Compliant: Yes975
  • 1:$4.3300
  • 10:$3.6800
  • 25:$3.5200
  • 50:$3.3500
  • 100:$3.1900
  • 250:$3.0300
FGH40N60SFTU.
DISTI # 29AC6333		Fairchild Semiconductor CorporationFSPIGBT TO247 40A 600V ROHS COMPLIANT: YES0
  • 1:$4.4200
  • 10:$3.7500
  • 25:$3.5200
  • 50:$3.3500
  • 100:$3.1900
  • 250:$3.0300
FGH40N60SFTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AB
RoHS: Compliant		492
  • 1000:$2.4000
  • 500:$2.5200
  • 100:$2.6200
  • 25:$2.7400
  • 1:$2.9500
FGH40N60SFTU
DISTI # 512-FGH40N60SFTU		ON SemiconductorIGBT Transistors N-CH / 40A 600V FS Planar
RoHS: Compliant		393
  • 1:$4.3200
  • 10:$3.6700
  • 100:$3.1800
  • 250:$3.0200
  • 500:$2.7100
  • 1000:$2.2800
  • 2500:$2.1700
FGH40N60SFTU
DISTI # 1885745		ON SemiconductorIGBT,N CH,600V,80A,TO247
RoHS: Compliant		969
  • 1:£3.7300
  • 10:£2.8500
  • 100:£2.4600
  • 250:£2.3500
  • 500:£2.2000
FGH40N60SFTU
DISTI # C1S541901510217		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		450
  • 250:$2.3830
  • 100:$2.4770
  • 10:$3.2420
  • 1:$3.7220
FGH40N60SFTU
DISTI # 1885745		ON SemiconductorIGBT,N CH,600V,80A,TO247
RoHS: Compliant		969
  • 1:$6.8600
  • 10:$5.8300
  • 100:$5.0600
  • 250:$4.8000
画像 モデル 説明
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IKW30N65H5XKSA1

Mfr.#: IKW30N65H5XKSA1

OMO.#: OMO-IKW30N65H5XKSA1

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OMO.#: OMO-ESMH201VNN222MA50T-UNITED-CHEMI-CON

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STGW30NC60WD

Mfr.#: STGW30NC60WD

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IGW30N60TPXKSA1

Mfr.#: IGW30N60TPXKSA1

OMO.#: OMO-IGW30N60TPXKSA1-INFINEON-TECHNOLOGIES

 IGBT 600V 53A TO247-3
IKW30N65H5XKSA1

Mfr.#: IKW30N65H5XKSA1

OMO.#: OMO-IKW30N65H5XKSA1-INFINEON-TECHNOLOGIES

 IGBT TRENCH 650V 55A TO247-3
可用性
ストック:
363
注文中:
2346
数量を入力してください:
FGH40N60SFTUの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格（USD）
量
単価
小計金額
1
$4.32
$4.32
10
$3.67
$36.70
100
$3.18
$318.00
250
$3.02
$755.00
500
$2.71
$1 355.00
1000
$2.28
$2 280.00
2500
$2.17
$5 425.00
5000
$2.09
$10 450.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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