STW18N60DM2

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

12 A

Rds On - Drain-Source Resistance:

260 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

25 V

Qg - Gate Charge:

20 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

90 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

MDmesh

Series:

STW18N60DM2

Transistor Type:

1 N-Channel

Brand:

STMicroelectronics

Forward Transconductance - Min:

-

Fall Time:

32.5 ns

Product Type:

MOSFET

Rise Time:

8 ns

Factory Pack Quantity:

600

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

9.5 ns

Typical Turn-On Delay Time:

13.5 ns

Unit Weight:

1.340411 oz

Tags

STW18N6, STW18, STW1, STW