IXFH7N100P

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

1 kV

Id - Continuous Drain Current:

7 A

Rds On - Drain-Source Resistance:

1.9 Ohms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

47 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

300 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

HiPerFET

Transistor Type:

1 N-Channel

Brand:

IXYS

Fall Time:

44 ns

Product Type:

MOSFET

Rise Time:

49 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

42 ns

Typical Turn-On Delay Time:

25 ns

Tags

IXFH7N, IXFH7, IXFH, IXF