BSC046N10NS3GATMA1

BSC046N10NS3GATMA1
Mfr. #:
BSC046N10NS3GATMA1
メーカー:
Infineon Technologies
説明:
MOSFET N-Ch 100V 100A TDSON-8
ライフサイクル:
メーカー新製品
データシート:
BSC046N10NS3GATMA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
TDSON-8
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
100 V
Id-連続ドレイン電流:
100 A
Rds On-ドレイン-ソース抵抗:
4 mOhms
Vgs th-ゲート-ソースしきい値電圧:
2 V
Vgs-ゲート-ソース間電圧:
20 V
Qg-ゲートチャージ:
63 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
156 W
構成:
独身
チャネルモード:
強化
商標名:
OptiMOS
包装:
リール
高さ:
1.27 mm
長さ:
5.9 mm
シリーズ:
OptiMOS 3
トランジスタタイプ:
1 N-Channel
幅:
5.15 mm
ブランド:
インフィニオンテクノロジーズ
フォワード相互コンダクタンス-最小:
48 S
立ち下がり時間:
11 ns
製品タイプ:
MOSFET
立ち上がり時間:
14 ns
ファクトリーパックの数量:
5000
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
41 ns
典型的なターンオン遅延時間:
16 ns
パーツ番号エイリアス:
BSC046N10NS3 BSC46N1NS3GXT G SP000907922
Tags
BSC046N10NS3, BSC046N1, BSC046, BSC04, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 4.6 mOhm OptiMOS™3 Power-MOSFET - PG-TDSON-8
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***nell
MOSFET, N-CH, 100V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V;
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ark
MOSFET Transistor, N Channel, 100 A, 75 V, 0.0037 ohm, 10 V, 3.1 V
***ure Electronics
Single N-Channel 75 V 4.2 mOhm 69 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 75V, 100A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:75V; On Resistance
***nell
MOSFET, N CH, 75V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; Power Dissipation Pd: 125W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
The 75V OptiMOS technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance. | Summary of Features: Optimized technology for synchronous rectification; Best switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RohS compliant - halogen free; MSL1 rated | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
***ure Electronics
Single N-Channel 75 V 3.6 mOhm 63.4 nC OptiMOS™ Power Mosfet - TDSON-8
***p One Stop
Trans MOSFET N-CH 75V 20A Automotive 8-Pin TDSON EP T/R
***ment14 APAC
MOSFET, N-CH, 75V, 100A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:75V; On Resistance
***nell
MOSFET, N-CH, 75V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; Power Dissipation Pd: 156W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
***ineon
The 75V OptiMOS technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance. | Summary of Features: Optimized technology for synchronous rectification; Best switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RohS compliant - halogen free; MSL1 rated | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
***ure Electronics
Single P-Channel 100 V 0.2 Ohms Surface Mount Power Mosfet - D2PAK-3
***ical
Trans MOSFET P-CH 100V 19A 3-Pin(2+Tab) D2PAK T/R
***ark
P CH MOSFET, -100V, 19A, SMD-220, FULL REEL
***roFlash
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, P-CH, 100V, 19A, TO-263;
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6 package, PG-TDSON-8, RoHS
*** Source Electronics
Trans MOSFET N-CH 100V 19A 8-Pin PQFN EP T/R
***(Formerly Allied Electronics)
MOSFET, 100V,100A, 5.2 mOhm, 34nC, PQFN5x6
***ineon
Benefits: Low RDSon (less than 5.2 mOhms); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg Tested; Low Profile (less than 1.05 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; RoHS Compliant, Halogen-Free; MSL1; FastIRFET | Target Applications: HotSwap; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***emi
N-Channel PowerTrench® MOSFET 80V, 100A, 3.9mΩ
***r Electronics
Power Field-Effect Transistor, 19.4A I(D), 80V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***emi
N-Channel Shielded Gate PowerTrench® MOSFET 100V , 18A, 23mΩ
***ark
MOSFET, N CH, 100V, 0.0189OHM, 18A, MLP-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0189ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that incorporates Shielded Gate Technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
モデル メーカー 説明 ストック 価格
BSC046N10NS3GATMA1
DISTI # BSC046N10NS3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$1.4162
BSC046N10NS3GATMA1
DISTI # BSC046N10NS3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 100V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$1.5954
  • 500:$1.8917
  • 100:$2.3361
  • 10:$2.8490
  • 1:$3.1900
BSC046N10NS3GATMA1
DISTI # BSC046N10NS3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 100V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$1.5954
  • 500:$1.8917
  • 100:$2.3361
  • 10:$2.8490
  • 1:$3.1900
BSC046N10NS3GATMA1
DISTI # BSC046N10NS3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 100V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC046N10NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$1.3900
  • 5002:$1.2900
  • 10002:$1.2900
  • 25000:$1.2900
  • 50000:$1.1900
BSC046N10NS3GATMA1
DISTI # 50Y1804
Infineon Technologies AGMOSFET, N-CH, 100V, 100A, 150DEG C, 156W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes0
  • 1:$2.6700
  • 10:$2.2700
  • 25:$2.1700
  • 50:$2.0700
  • 100:$1.9700
  • 250:$1.8700
  • 500:$1.6700
  • 1000:$1.4100
BSC046N10NS3 G
DISTI # 726-BSC046N10NS3G
Infineon Technologies AGMOSFET N-Ch 100V 100A TDSON-8
RoHS: Compliant
100
  • 1:$2.6700
  • 10:$2.2700
  • 100:$1.9700
  • 250:$1.8700
  • 500:$1.6700
  • 1000:$1.4100
  • 2500:$1.3400
  • 5000:$1.2900
BSC046N10NS3GATMA1
DISTI # 726-BSC046N10NS3GATM
Infineon Technologies AGMOSFET N-Ch 100V 100A TDSON-8
RoHS: Compliant
0
  • 1:$2.6700
  • 10:$2.2700
  • 100:$1.9700
  • 250:$1.8700
  • 500:$1.6700
  • 1000:$1.4100
  • 2500:$1.3400
  • 5000:$1.2900
BSC046N10NS3GATMA1
DISTI # 2480739
Infineon Technologies AGMOSFET, N-CH, 100V, 100A, TDSON-8
RoHS: Compliant
0
  • 1:$4.2300
  • 10:$3.6000
  • 100:$3.1200
  • 250:$2.9700
  • 500:$2.6500
  • 1000:$2.2300
  • 2500:$2.1300
  • 5000:$2.0400
BSC046N10NS3GATMA1
DISTI # 2480739RL
Infineon Technologies AGMOSFET, N-CH, 100V, 100A, TDSON-8
RoHS: Compliant
0
  • 1:$4.2300
  • 10:$3.6000
  • 100:$3.1200
  • 250:$2.9700
  • 500:$2.6500
  • 1000:$2.2300
  • 2500:$2.1300
  • 5000:$2.0400
BSC046N10NS3GATMA1
DISTI # 2480739
Infineon Technologies AGMOSFET, N-CH, 100V, 100A, TDSON-8
RoHS: Compliant
0
  • 1:£2.3000
  • 10:£1.7400
  • 100:£1.5000
  • 250:£1.4300
  • 500:£1.2700
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Mfr.#: 0805YC475KAT2A

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Multilayer Ceramic Capacitors MLCC - SMD/SMT 4.7uF 16V 10%
ABS07W-32.768KHZ-D-1-T

Mfr.#: ABS07W-32.768KHZ-D-1-T

OMO.#: OMO-ABS07W-32-768KHZ-D-1-T-ABRACON

CRYSTAL 32.7680KHZ 3PF SMD
可用性
ストック:
Available
注文中:
1986
数量を入力してください:
BSC046N10NS3GATMA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$2.66
$2.66
10
$2.26
$22.60
100
$1.96
$196.00
250
$1.86
$465.00
500
$1.67
$835.00
1000
$1.40
$1 400.00
2500
$1.33
$3 325.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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