STB16N90K5

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

D2PAK-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

900 V

Id - Continuous Drain Current:

15 A

Rds On - Drain-Source Resistance:

330 mOhms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

29.7 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

190 W

Configuration:

Single

Channel Mode:

Enhancement

Transistor Type:

1 N-Channel

Brand:

STMicroelectronics

Fall Time:

9.8 ns

Product Type:

MOSFET

Rise Time:

36 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

46 ns

Typical Turn-On Delay Time:

28.8 ns

Tags

STB16N, STB16, STB1, STB