APT9F100B

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

1 kV

Id - Continuous Drain Current:

9 A

Rds On - Drain-Source Resistance:

1.6 Ohms

Vgs th - Gate-Source Threshold Voltage:

4 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

80 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

337 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Brand:

Microchip / Microsemi

Forward Transconductance - Min:

10 S

Fall Time:

24 ns

Product Type:

MOSFET

Rise Time:

27 ns

Factory Pack Quantity:

1

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

84 ns

Typical Turn-On Delay Time:

27 ns

Unit Weight:

0.229281 oz

Tags

APT9, APT