IPD65R660CFDA

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Id - Continuous Drain Current:

6 A

Rds On - Drain-Source Resistance:

594 mOhms

Vgs th - Gate-Source Threshold Voltage:

3.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

20 nC

Minimum Operating Temperature:

- 40 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

62.5 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

CoolMOS

Packaging:

Reel

Height:

2.3 mm

Length:

6.5 mm

Series:

CoolMOS CFDA

Transistor Type:

1 N-Channel

Width:

6.22 mm

Brand:

Infineon Technologies

Fall Time:

10 ns

Product Type:

MOSFET

Rise Time:

8 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

40 ns

Typical Turn-On Delay Time:

9 ns

Part # Aliases:

IPD65R660CFDAATMA1 IPD65R66CFDAXT SP000928260

Unit Weight:

0.011993 oz

Tags

IPD65R660CFDA, IPD65R66, IPD65R6, IPD65R, IPD65, IPD6, IPD