IXFH170N10P

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

170 A

Rds On - Drain-Source Resistance:

9 mOhms

Vgs th - Gate-Source Threshold Voltage:

5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

198 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

714 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

HiPerFET

Packaging:

Tube

Height:

21.46 mm

Length:

16.26 mm

Series:

IXFH170N10

Transistor Type:

1 N-Channel

Type:

PolarHT HiPerFET Power MOSFET

Width:

5.3 mm

Brand:

IXYS

Forward Transconductance - Min:

45 S

Fall Time:

33 ns

Product Type:

MOSFET

Rise Time:

50 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

90 ns

Typical Turn-On Delay Time:

35 ns

Unit Weight:

0.229281 oz

Tags

IXFH170, IXFH17, IXFH1, IXFH, IXF