IRF7521D1PBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

Micro-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

2.4 A

Rds On - Drain-Source Resistance:

135 mOhms

Vgs th - Gate-Source Threshold Voltage:

700 mV

Vgs - Gate-Source Voltage:

12 V

Qg - Gate Charge:

5.3 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

1.25 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

1.11 mm

Length:

3 mm

Transistor Type:

1 N-Channel

Width:

3 mm

Brand:

Infineon / IR

Forward Transconductance - Min:

2.6 S

Fall Time:

16 ns

Moisture Sensitive:

Yes

Product Type:

MOSFET

Rise Time:

24 ns

Factory Pack Quantity:

80

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

15 ns

Typical Turn-On Delay Time:

5.7 ns

Tags

IRF7521, IRF752, IRF75, IRF7, IRF