STB6N62K3

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

620 V

Id - Continuous Drain Current:

5.5 A

Rds On - Drain-Source Resistance:

950 mOhms

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

34 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

90 W

Configuration:

Single

Packaging:

Reel

Series:

STB6N62K3

Transistor Type:

1 N-Channel

Brand:

STMicroelectronics

Fall Time:

20 ns

Product Type:

MOSFET

Rise Time:

12 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

49 ns

Typical Turn-On Delay Time:

22 ns

Unit Weight:

0.139332 oz

Tags

STB6N6, STB6N, STB6, STB