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IXFR44N50Q3

IXFR44N50Q3
Mfr. #:
IXFR44N50Q3
メーカー:
Littelfuse
説明:
MOSFET Q3Class HiPerFET Pwr MOSFET 500V/25A
ライフサイクル:
メーカー新製品
データシート:
IXFR44N50Q3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFR44N50Q3 DatasheetIXFR44N50Q3 Datasheet (P4-P5)
ECAD Model:
詳しくは:
IXFR44N50Q3 詳しくは
製品属性
属性値
メーカー：
IXYS
製品カテゴリ：
MOSFET
JBoss：
Y
テクノロジー：
Si
取り付けスタイル：
スルーホール
パッケージ/ケース：
TO-247-3
チャネル数：
1 Channel
トランジスタの極性：
Nチャネル
Vds-ドレイン-ソース間降伏電圧：
500 V
Id-連続ドレイン電流：
25 A
Rds On-ドレイン-ソース抵抗：
154 mOhms
Vgs-ゲート-ソース間電圧：
30 V
Qg-ゲートチャージ：
93 nC
Pd-消費電力：
300 W
構成：
独身
商標名：
HiPerFET
包装：
チューブ
シリーズ：
IXFR44N50
トランジスタタイプ：
1 N-Channel
ブランド：
IXYS
製品タイプ：
MOSFET
立ち上がり時間：
250 ns
ファクトリーパックの数量：
30
サブカテゴリ：
MOSFET
単位重量：
0.056438 oz
Tags
IXFR44N5, IXFR44, IXFR4, IXFR, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) ISOPLUS 247
***el Electronic
MOSFET Q3Class HiPerFET Pwr MOSFET 500V/25A
***i-Key
MOSFET N-CH 500V 25A ISOPLUS247
***r Electronics
Power Field-Effect Transistor, 29A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 600 V 110 mOhm Flange Mount FDmesh II Power Mosfet - TO-247-3
***ical
Trans MOSFET N-CH 600V 29A Automotive 3-Pin(3+Tab) TO-247 Tube
***ark
MOSFET, N-CH, AEC-Q101, 600V, 29A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:29A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***nell
MOSFET, N-CH, AUTO, 600V, 29A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 29A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.097ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 190W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: FDmesh II Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***emi
N-Channel Power MOSFET, SUPERFET® II, FAST, 600V, 28A, 130mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 28A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
***ical
Trans MOSFET N-CH Si 650V 27.6A 3-Pin(3+Tab) TO-247 Tube
***i-Key
MOSFET N-CH 650V 27.6A TO247
***
POWER MOSFET TRANSISTOR
***Yang
MOSFET Automotive-grade N-channel 600 V, 0.094 Ohm typ 28 A MDmesh DM2 Power MOSFET
***r Electronics
Power Field-Effect Transistor, 28A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ark
MOSFET, N-CH, 600V, 28A, TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.094ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
***emi
N-Channel Power MOSFET, UniFETTM, FRFET®, 500 V, 45 A, 120 mΩ, TO-247
***el Electronic
N-Channel UniFETTM FRFET® MOSFET 500V, 45A, 120mΩ, TO-247 3L, 3600-RAIL
*** Stop Electro
Power Field-Effect Transistor, 45A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***ark
X35 Pb-F Power Mosfet Transistor To-247(Os) Pd=180W F=1Mhz
***ical
Trans MOSFET N-CH Si 600V 25A 3-Pin(3+Tab) TO-247 Tube
***
POWER MOSFET TRANSISTOR
***el Electronic
IC SUPERVISOR
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
モデル メーカー 説明 ストック 価格
IXFR44N50Q3
DISTI # IXFR44N50Q3-ND		IXYS CorporationMOSFET N-CH 500V 25A ISOPLUS247
RoHS: Compliant
Min Qty: 1
Container: Tube		40In Stock
  • 120:$15.3340
  • 30:$16.6870
  • 1:$19.8400
IXFR44N50Q3
DISTI # 747-IXFR44N50Q3		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 500V/25A
RoHS: Compliant		45
  • 1:$20.7400
  • 10:$18.8600
  • 25:$17.4400
  • 50:$16.0500
  • 100:$15.6600
  • 250:$14.3500
  • 500:$13.0200
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Mfr.#: DSEC29-06AC

OMO.#: OMO-DSEC29-06AC-IXYS-CORPORATION

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DSS4540X-13

Mfr.#: DSS4540X-13

OMO.#: OMO-DSS4540X-13-DIODES

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可用性
ストック:
35
注文中:
2018
数量を入力してください:
IXFR44N50Q3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格（USD）
量
単価
小計金額
1
$20.74
$20.74
10
$18.86
$188.60
25
$17.44
$436.00
50
$16.05
$802.50
100
$15.66
$1 566.00
250
$14.35
$3 587.50
500
$13.02
$6 510.00
1000
$11.89
$11 890.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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