IPB017N08N5

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

80 V

Id - Continuous Drain Current:

120 A

Rds On - Drain-Source Resistance:

1.5 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

223 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

375 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

OptiMOS

Packaging:

Reel

Height:

4.4 mm

Length:

10 mm

Series:

OptiMOS 5

Transistor Type:

1 N-Channel

Width:

9.25 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

114 S

Fall Time:

37 ns

Product Type:

MOSFET

Rise Time:

36 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

102 ns

Typical Turn-On Delay Time:

40 ns

Part # Aliases:

IPB017N08N5ATMA1 SP001132472

Tags

IPB017N0, IPB017, IPB01, IPB0, IPB