IXBT6N170

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

IGBT Transistors

RoHS:

Y

Technology:

Si

Package / Case:

TO-268-3

Mounting Style:

SMD/SMT

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

1.7 kV

Collector-Emitter Saturation Voltage:

2.84 V

Maximum Gate Emitter Voltage:

20 V

Continuous Collector Current at 25 C:

12 A

Pd - Power Dissipation:

75 W

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

IXBT6N170

Packaging:

Tube

Continuous Collector Current Ic Max:

36 A

Height:

5.1 mm

Length:

16.05 mm

Operating Temperature Range:

- 55 C to + 150 C

Width:

14 mm

Brand:

IXYS

Continuous Collector Current:

12 A

Gate-Emitter Leakage Current:

100 nA

Product Type:

IGBT Transistors

Factory Pack Quantity:

30

Subcategory:

IGBTs

Tradename:

BIMOSFET

Unit Weight:

0.158733 oz

Tags

IXBT, IXB