MRF6S18100NBR1

Product Attribute

Attribute Value

Manufacturer:

NXP

Product Category:

RF MOSFET Transistors

RoHS:

E

Transistor Polarity:

N-Channel

Technology:

Si

Vds - Drain-Source Breakdown Voltage:

68 V

Gain:

14.5 dB

Output Power:

100 W

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Mounting Style:

SMD/SMT

Package / Case:

TO-272-4

Packaging:

Reel

Configuration:

Single

Height:

2.64 mm

Length:

23.67 mm

Operating Frequency:

1.8 GHz to 2 GHz

Type:

RF Power MOSFET

Width:

9.07 mm

Brand:

NXP / Freescale

Channel Mode:

Enhancement

Moisture Sensitive:

Yes

Pd - Power Dissipation:

343 W

Product Type:

RF MOSFET Transistors

Factory Pack Quantity:

500

Subcategory:

MOSFETs

Vgs - Gate-Source Voltage:

- 0.5 V, 12 V

Vgs th - Gate-Source Threshold Voltage:

3 V

Unit Weight:

0.067412 oz

Tags

MRF6S1810, MRF6S181, MRF6S18, MRF6S1, MRF6S, MRF6, MRF