SIHG30N60E-E3

Mfr. #:: SIHG30N60E-E3
メーカー:: Vishay
説明:: RF Bipolar Transistors MOSFET N-Channel 600V
ライフサイクル:: メーカー新製品
データシート:: SIHG30N60E-E3 データシート
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ECAD Model:
詳しくは:: SIHG30N60E-E3 詳しくは

製品属性
属性値

Tags: SIHG30N60E, SIHG30, SIHG3, SIHG, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHG30N60E-E3 説明

***ark: MOSFET, N CH, 600V, 29A, TO-247AC; Transistor Polarity:N Channel; Continuous Dra

***ure Electronics: E-Series N-Channel 600 V 0.125 O 130 nC Flange Mount Power Mosfet - TO-247AC

***et: Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC

***o-Tech: MOSFET N-Channel 600V 29A TO247AC

***nell: MOSFET, N CH, 600V, 29A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

SIHG30N60E-E3 詳しくは

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

モデル	メーカー	説明	ストック	価格
SIHG30N60E-E3 DISTI # SIHG30N60E-E3-ND	Vishay Siliconix	MOSFET N-CH 600V 29A TO247AC Min Qty: 1 Container: Tube	499In Stock	100:$4.4850 25:$5.1752 10:$5.4740 1:$6.1000
SIHG30N60E-E3 DISTI # SIHG30N60E-E3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: SIHG30N60E-E3) RoHS: Not Compliant Min Qty: 500 Container: Tube	Americas - 0	5000:$2.8900 3000:$2.9900 2000:$3.0900 1000:$3.1900 500:$3.2900
SIHG30N60E-E3 DISTI # 781-SIHG30N60E-E3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs TO-247AC RoHS: Compliant	327	1:$6.4400 10:$5.3300 100:$4.3900 250:$4.2500 500:$4.1900 1000:$3.5900 2500:$3.0500
SIHG30N60E-GE3 DISTI # 78-SIHG30N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs TO-247AC RoHS: Compliant	25	1:$6.4400 10:$5.3300 100:$4.3900 250:$4.2500
SIHG30N60E-E3	Vishay Intertechnologies		100

関連製品

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	Mfr.#: SIHG30N60E-E3 OMO.#: OMO-SIHG30N60E-E3	MOSFET 600V Vds 30V Vgs TO-247AC
	Mfr.#: SIHG30N60E-GE3 OMO.#: OMO-SIHG30N60E-GE3	MOSFET 600V Vds 30V Vgs TO-247AC
	Mfr.#: SIHG30N60AEL-GE3 OMO.#: OMO-SIHG30N60AEL-GE3	MOSFET RECOMMENDED ALT 78-SIHG120N60E-GE3
	Mfr.#: SIHG30N60E-E3 OMO.#: OMO-SIHG30N60E-E3-VISHAY	RF Bipolar Transistors MOSFET N-Channel 600V
	Mfr.#: SIHG30N60AEL-GE3 OMO.#: OMO-SIHG30N60AEL-GE3-VISHAY	MOSFET N-CHAN 600V TO-247AC
	Mfr.#: SIHG30N60E OMO.#: OMO-SIHG30N60E-1190	ブランドニューオリジナル
	Mfr.#: SIHG30N60E-GE3 OMO.#: OMO-SIHG30N60E-GE3-VISHAY	MOSFET N-CH 600V 29A TO247AC
	Mfr.#: SIHG30N60EGE3 OMO.#: OMO-SIHG30N60EGE3-1190	Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC