SIHFR9014-GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

5.1 A

Rds On - Drain-Source Resistance:

500 mOhms

Vgs th - Gate-Source Threshold Voltage:

- 4 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

12 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

25 W

Configuration:

Single

Channel Mode:

Enhancement

Series:

SIH

Transistor Type:

1 P-Channel

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

1.4 S

Fall Time:

31 ns

Product Type:

MOSFET

Rise Time:

63 ns

Factory Pack Quantity:

1

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

9.6 ns

Typical Turn-On Delay Time:

11 ns

Tags

SIHFR9014, SIHFR901, SIHFR90, SIHFR9, SIHFR, SIHF, SIH