2N3762L

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

Bipolar Transistors - BJT

RoHS:

N

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-5-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

40 V

Collector- Base Voltage VCBO:

40 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

0.9 V

Maximum DC Collector Current:

1.5 A

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 200 C

DC Current Gain hFE Max:

120

Packaging:

Foil Bag

Brand:

Microchip / Microsemi

Continuous Collector Current:

1.5 A

DC Collector/Base Gain hfe Min:

30

Pd - Power Dissipation:

1 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1

Subcategory:

Transistors

Tags

2N3762, 2N376, 2N37, 2N3