NVA4153NT1G

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-416-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

915 mA

Rds On - Drain-Source Resistance:

127 mOhms

Vgs th - Gate-Source Threshold Voltage:

450 mV

Vgs - Gate-Source Voltage:

6 V

Qg - Gate Charge:

1.82 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

300 mW

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Packaging:

Reel

Transistor Type:

1 N-Channel

Brand:

ON Semiconductor

Forward Transconductance - Min:

1.4 S

Fall Time:

7.6 ns

Product Type:

MOSFET

Rise Time:

4.4 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

25 ns

Typical Turn-On Delay Time:

3.7 ns

Unit Weight:

0.000212 oz

Tags

NVA4, NVA