2SD1918TLQ

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

SMD/SMT

Package / Case:

CPT-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

160 V

Collector- Base Voltage VCBO:

160 V

Emitter- Base Voltage VEBO:

5 V

Maximum DC Collector Current:

1.5 A

Gain Bandwidth Product fT:

80 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

2SD1918

DC Current Gain hFE Max:

120 at 100 mA, 5 V

Height:

2.3 mm

Length:

6.5 mm

Packaging:

Reel

Width:

5.5 mm

Brand:

ROHM Semiconductor

Continuous Collector Current:

1.5 A

DC Collector/Base Gain hfe Min:

120

Pd - Power Dissipation:

1000 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

2500

Subcategory:

Transistors

Unit Weight:

0.009185 oz

Tags

2SD1918T, 2SD1918, 2SD191, 2SD19, 2SD1, 2SD