2N5796/TR

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

Bipolar Transistors - BJT

RoHS:

N

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-78-6

Transistor Polarity:

PNP

Configuration:

Dual

Collector- Emitter Voltage VCEO Max:

60 V

Collector- Base Voltage VCBO:

60 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

1.6 V

Maximum DC Collector Current:

600 mA

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 175 C

DC Current Gain hFE Max:

300 at 150 mA, 10 V

Packaging:

Reel

Brand:

Microchip / Microsemi

DC Collector/Base Gain hfe Min:

50 at 150 mA, 1 V

Pd - Power Dissipation:

600 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

100

Subcategory:

Transistors

Tags

2N5796, 2N579, 2N57, 2N5