IXTA100N04T2

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

40 V

Id - Continuous Drain Current:

100 A

Rds On - Drain-Source Resistance:

7 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

150 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

HiPerFET

Packaging:

Tube

Height:

4.83 mm

Length:

10.41 mm

Series:

IXTA100N04

Transistor Type:

1 N-Channel

Width:

9.65 mm

Brand:

IXYS

Fall Time:

6.4 ns

Product Type:

MOSFET

Rise Time:

5.2 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

15.8 ns

Typical Turn-On Delay Time:

12 ns

Unit Weight:

0.056438 oz

Tags

IXTA100N0, IXTA100, IXTA10, IXTA1, IXTA, IXT