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IPD090N03LGATMA1

IPD090N03LGATMA1
Mfr. #:
IPD090N03LGATMA1
メーカー:
Infineon Technologies
説明:
MOSFET N-Ch 30V 40A DPAK-2
ライフサイクル:
メーカー新製品
データシート:
IPD090N03LGATMA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー：
インフィニオン
製品カテゴリ：
MOSFET
JBoss：
Y
テクノロジー：
Si
取り付けスタイル：
SMD / SMT
パッケージ/ケース：
TO-252-3
チャネル数：
1 Channel
トランジスタの極性：
Nチャネル
Vds-ドレイン-ソース間降伏電圧：
30 V
Id-連続ドレイン電流：
40 A
Rds On-ドレイン-ソース抵抗：
7.5 mOhms
Vgs-ゲート-ソース間電圧：
20 V
Qg-ゲートチャージ：
15 nC
最低動作温度：
- 55 C
最高作動温度：
+ 175 C
Pd-消費電力：
42 W
構成：
独身
商標名：
OptiMOS
包装：
リール
高さ：
2.3 mm
長さ：
6.5 mm
シリーズ：
OptiMOS 3
トランジスタタイプ：
1 N-Channel
幅：
6.22 mm
ブランド：
インフィニオンテクノロジーズ
フォワード相互コンダクタンス-最小：
53 S
立ち下がり時間：
2.6 ns
製品タイプ：
MOSFET
立ち上がり時間：
3 ns
ファクトリーパックの数量：
2500
サブカテゴリ：
MOSFET
パーツ番号エイリアス：
G IPD090N03L IPD9N3LGXT SP000680636
単位重量：
0.139332 oz
Tags
IPD090N03LG, IPD090N03L, IPD090, IPD09, IPD0, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***o-Tech
N-channel MOSFET Transistor, 40 A, 30 V, 3-pin PG-TO-252-3-11
***ure Electronics
N-Channel 30 V 9 mOhm 15 nC OptiMOS™3 Power-Transistor - TO-252-3
***ark
MOSFET, N CHANNEL, 30V, 40A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 2.6 / Rise Time ns = 3 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 42
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***et Japan
Transistor MOSFET N-Channel 30V 50A 4-Pin TO-252 T/R
***ment14 APAC
MOSFET, N CH, 50A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:47W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:50A; Power Dissipation Pd:47W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***emi
PowerTrench® MOSFET, N-Channel, 25V, 35A, 8.5mΩ
***ure Electronics
N-Channel 25 V 35 A 8.5 mOhm PowerTrench® MOSFET- TO-252AA
*** Stop Electro
Power Field-Effect Transistor, 35A I(D), 25V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***el Electronic
Rectangular Connectors - Headers, Receptacles, Female Sockets 2 Socket Solder Beryllium Copper Through Hole Bulk Gold Polycyclohexylenedimethylene Terephthalate (PCT), Polyester, Glass Filled 10 CONN SOCKET 10POS 0.1 GOLD PCB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
***nell
MOSFET, N CH, 25V, 35A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 50W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ical
Trans MOSFET N-CH 30V 20A 3-Pin (2+Tab) DPAK Rail
***ser
MOSFETs- Power and Small Signal 30V 20A N-Channel
***r Electronics
Power Field-Effect Transistor, 20A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):27mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:1.6V; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:288mJ; Current Id Max:20A; Junction to Case Thermal Resistance A:1.67°C/W; Package / Case:DPAK; Power Dissipation Pd:74W; Power Dissipation Pd:74W; Pulse Current Idm:60A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.6V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V
***ical
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R
***ment14 APAC
MOSFET, N CH, 90A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***emi
N-Channel PowerTrench® MOSFET, 30V, 21A, 35mΩ
***ure Electronics
N-Channel 30 V 35 mOhm Surface Mount PowerTrench Mosfet TO-252-3
***r Electronics
Power Field-Effect Transistor, 21A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***nell
MOSFET, N CH, 30V, 21A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:28W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***des Inc SCT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET, N+P, 35V VDS, 20±V VGS
***ical
Trans MOSFET N/P-CH 35V 8.6A/7.8A 5-Pin(4+Tab) DPAK T/R
***ark
Mosfet, Dual, N/p-Ch, 35V, 5.3A Rohs Compliant: Yes
***el Electronic
MOSFET MOSFET BVDSS: 31V-40 V-40V,TO252,2.5K
***ure Electronics
35V, 13A, N&P CHANNEL, D2PAK-4L
*** Services
CoC and 2-years warranty / RFQ for pricing
モデル メーカー 説明 ストック 価格
IPD090N03LGATMA1
DISTI # V72:2272_06391054		Infineon Technologies AGTrans MOSFET N-CH 30V 40A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		161
  • 100:$0.3316
  • 25:$0.4601
  • 10:$0.5623
  • 1:$0.6737
IPD090N03LGATMA1
DISTI # V36:1790_06391054		Infineon Technologies AGTrans MOSFET N-CH 30V 40A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
  • 2500000:$0.1937
  • 1250000:$0.1940
  • 250000:$0.2137
  • 25000:$0.2476
  • 2500:$0.2532
IPD090N03LGATMA1
DISTI # IPD090N03LGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 40A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3861In Stock
  • 1000:$0.2878
  • 500:$0.3597
  • 100:$0.4550
  • 10:$0.5940
  • 1:$0.6700
IPD090N03LGATMA1
DISTI # IPD090N03LGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 40A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3861In Stock
  • 1000:$0.2878
  • 500:$0.3597
  • 100:$0.4550
  • 10:$0.5940
  • 1:$0.6700
IPD090N03LGATMA1
DISTI # IPD090N03LGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 40A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 25000:$0.2212
  • 12500:$0.2270
  • 5000:$0.2357
  • 2500:$0.2532
IPD090N03LGATMA1
DISTI # 32378537		Infineon Technologies AGTrans MOSFET N-CH 30V 40A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		161
  • 31:$0.6737
IPD090N03LGXT
DISTI # IPD090N03LGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 40A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD090N03LGATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 5000
  • 25000:$0.2049
  • 15000:$0.2099
  • 10000:$0.2149
  • 5000:$0.2209
  • 2500:$0.2269
IPD090N03L G
DISTI # IPD090N03LGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 40A 3-Pin TO-252 T/R - Bulk (Alt: IPD090N03LGATMA1)
RoHS: Compliant
Min Qty: 1667
Container: Bulk		Americas - 0
  • 16670:$0.1899
  • 8335:$0.1939
  • 5001:$0.1999
  • 3334:$0.2079
  • 1667:$0.2159
IPD090N03LGATMA1
DISTI # 50Y2025		Infineon Technologies AGMOSFET Transistor, N Channel, 40 A, 30 V, 0.0075 ohm, 10 V, 2.2 V RoHS Compliant: Yes357
  • 1000:$0.2700
  • 500:$0.2920
  • 250:$0.3140
  • 100:$0.3360
  • 50:$0.3980
  • 25:$0.4600
  • 10:$0.5210
  • 1:$0.6260
IPD090N03LGATMA1
DISTI # 726-IPD090N03LGATMA1		Infineon Technologies AGMOSFET N-Ch 30V 40A DPAK-2
RoHS: Compliant		5138
  • 1:$0.6200
  • 10:$0.5160
  • 100:$0.3330
  • 1000:$0.2670
  • 2500:$0.2250
  • 10000:$0.2170
  • 25000:$0.2080
IPD090N03LGATMA1Infineon Technologies AGN-Channel 30 V 9 mOhm 15 nC OptiMOS3 Power-Transistor - TO-252-3
RoHS: Not Compliant		100Cut Tape/Mini-Reel
  • 1:$0.3750
  • 50:$0.2800
  • 100:$0.2700
  • 250:$0.2500
  • 500:$0.2400
IPD090N03LGATMA1Infineon Technologies AGPower Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Not Compliant		38680
  • 1000:$0.2000
  • 500:$0.2100
  • 100:$0.2200
  • 25:$0.2300
  • 1:$0.2400
IPD090N03LGATMA1
DISTI # IPD090N03LGATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,30A,42W,PG-TO252-33204
  • 1000:$0.2399
  • 100:$0.2579
  • 10:$0.2984
  • 3:$0.3705
  • 1:$0.5338
IPD090N03LGATMA1
DISTI # 2480820		Infineon Technologies AGMOSFET, N-CH, 30V, 40A, TO-252-3397
  • 500:£0.2010
  • 250:£0.2290
  • 100:£0.2570
  • 10:£0.4420
  • 1:£0.5470
IPD090N03LGATMA1
DISTI # 2480820		Infineon Technologies AGMOSFET, N-CH, 30V, 40A, TO-252-3
RoHS: Compliant		357
  • 1000:$0.3590
  • 500:$0.4140
  • 100:$0.4910
  • 10:$0.6010
  • 1:$0.6900
IPD090N03LGATMA1
DISTI # 2480820RL		Infineon Technologies AGMOSFET, N-CH, 30V, 40A, TO-252-3
RoHS: Compliant		0
  • 1000:$0.3590
  • 500:$0.4140
  • 100:$0.4910
  • 10:$0.6010
  • 1:$0.6900
画像 モデル 説明
STM32F767ZIT6

Mfr.#: STM32F767ZIT6

OMO.#: OMO-STM32F767ZIT6

 ARM Microcontrollers - MCU 16/32-BITS MICROS
TPS7A1901DRBR

Mfr.#: TPS7A1901DRBR

OMO.#: OMO-TPS7A1901DRBR

 LDO Voltage Regulators 40-V 450-mA low-IQ low-dropout (LDO) linear regulator with power good 8-SON -40 to 125
C503B-RAN-CZ0C0AA1

Mfr.#: C503B-RAN-CZ0C0AA1

OMO.#: OMO-C503B-RAN-CZ0C0AA1

 Standard LEDs - Through Hole Red Round
NUCLEO-F767ZI

Mfr.#: NUCLEO-F767ZI

OMO.#: OMO-NUCLEO-F767ZI

 Development Boards & Kits - ARM STM32 Nucleo-144 development board with STM32F767ZI MCU, supports Arduino, ST Zio and morpho connectivity
STM32F767ZIT6

Mfr.#: STM32F767ZIT6

OMO.#: OMO-STM32F767ZIT6-STMICROELECTRONICS

 IC MCU 32BIT 2MB FLASH 144LQFP
43030-0038

Mfr.#: 43030-0038

OMO.#: OMO-43030-0038-1190

 Crimp Terminal 18AWG Phosphor Bronze F Tin Micro-Fit™ Reel
NUCLEO-F767ZI

Mfr.#: NUCLEO-F767ZI

OMO.#: OMO-NUCLEO-F767ZI-STMICROELECTRONICS

 STM32F767ZIT6 Microcontroller Development Board 0.032768MHz CPU 2MB Flash
TPS7A1901DRBR

Mfr.#: TPS7A1901DRBR

OMO.#: OMO-TPS7A1901DRBR-TEXAS-INSTRUMENTS

 IC REG LINEAR POS ADJ 450MA 8SON
C503B-RAN-CZ0C0AA1

Mfr.#: C503B-RAN-CZ0C0AA1

OMO.#: OMO-C503B-RAN-CZ0C0AA1-CREE

 ROUND 503-B SERIES LED -RED CO
47725-6010

Mfr.#: 47725-6010

OMO.#: OMO-47725-6010-393

 Conn Housing M 12 POS 3.5mm Crimp ST Panel Mount Black Tray
可用性
ストック:
Available
注文中:
1988
数量を入力してください:
IPD090N03LGATMA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格（USD）
量
単価
小計金額
1
$0.62
$0.62
10
$0.52
$5.16
100
$0.33
$33.30
1000
$0.27
$267.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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