S25FL128SAGMFI013

Mfr. #:: S25FL128SAGMFI013
メーカー:: Cypress Semiconductor
説明:: Flash Memory 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, SO3016 IN T&R PACKING
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詳しくは:: S25FL128SAGMFI013 詳しくは S25FL128SAGMFI013 Product Details

製品属性
属性値

メーカー: サイプレスセミコンダクター株式会社

製品カテゴリ: メモリー

シリーズ: FL-S

包装: テープ＆リール（TR）

パッケージ-ケース: 16-SOIC (0.295", 7.50mm Width)

作動温度: -40°C ~ 85°C (TA)

インターフェース: SPIシリアル

電圧供給: 2.7 V ~ 3.6 V

サプライヤー-デバイス-パッケージ: 16-SO

メモリー容量: 128M (16M x 8)

メモリタイプ: フラッシュ-NOR

スピード: 133MHz

フォーマット-メモリ: 閃光

Tags: S25FL128SAGMFI01, S25FL128SAGMFI0, S25FL128SAGMFI, S25FL128SAGM, S25FL128SAG, S25FL128SA, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25

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S25FL128SAGMFI013 説明

***et Europe: NOR Flash Serial-SPI 3V/3.3V 128Mbit 128M x 1bit 8ns 16-Pin SOIC W T/R

***i-Key: IC FLASH 128M SPI 133MHZ 16SOIC

***ark: Tape And Reel / 128-Mbit Cmos 3.0 Volt 65Nm Flash Memory With 133-Mhz Spi (Serial Peripheral Interface) And Multi I/o Bus - 256Kb, So3016 In T&r Packing

S25FL128SAGMFI013 詳しくは

S25FL128S NOR Flash Memory Devices: Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.

S25FL MirroBit Flash Non-Volatile Memory: Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.

S25FLxS FL-S NOR Flash Memory Devices: Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.

Market price

モデル	メーカー	説明	ストック	価格
S25FL128SAGMFI013 DISTI # S25FL128SAGMFI013-ND	Cypress Semiconductor	IC FLASH 128M SPI 133MHZ 16SOIC RoHS: Compliant Min Qty: 1450 Container: Tape & Reel (TR)	Temporarily Out of Stock	1450:$2.8646
S25FL128SAGMFI013 DISTI # 51Y1005	Cypress Semiconductor	TAPE AND REEL / 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, SO3016 IN T&R PACKING	0	1:$2.0500
S25FL128SAGMFI013 DISTI # 727-25FL128SAGMFI013	Cypress Semiconductor	NOR Flash Nor RoHS: Compliant	0	1:$3.2500 10:$2.9500 25:$2.8800 50:$2.8700 100:$2.5700 250:$2.5600 500:$2.4600 1450:$2.3400
S25FL128SAGMFI013 DISTI # XSFP00000142549	CYPRESS SEMICONDUCTOR	Zener Diode, 8.2V V(Z), 5%, 1.5W, Silicon,Unidirectional RoHS: Compliant	1952	1450:$3.0500 1952:$2.8600

画像	モデル	説明
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	Mfr.#: S25FL128SAGBHIT00 OMO.#: OMO-S25FL128SAGBHIT00	NOR Flash Nor
	Mfr.#: S25FL128LAGBHV023 OMO.#: OMO-S25FL128LAGBHV023	NOR Flash Nor
	Mfr.#: S25FL128P0XMFI001M OMO.#: OMO-S25FL128P0XMFI001M	NOR Flash Nor
	Mfr.#: S25FL128SAGMFVR00 OMO.#: OMO-S25FL128SAGMFVR00-CYPRESS-SEMICONDUCTOR	IC FLASH 128M SPI 133MHZ 16SOIC
	Mfr.#: S25FL128SAGMFV010 OMO.#: OMO-S25FL128SAGMFV010-CYPRESS-SEMICONDUCTOR	Flash Memory 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, SO3016 IN TRAY PACKING
	Mfr.#: S25FL128SAGMFIG13 OMO.#: OMO-S25FL128SAGMFIG13-CYPRESS-SEMICONDUCTOR	Flash Memory 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, SO3016 IN T&R PACKING, WITH RESET#
	Mfr.#: S25FL128P0XMFI010(FL128 OMO.#: OMO-S25FL128P0XMFI010-FL128-1190	ブランドニューオリジナル

S25FL128SAGMFI013

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes