HUF75339G3

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

E

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

55 V

Id - Continuous Drain Current:

75 A

Rds On - Drain-Source Resistance:

12 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

200 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

20.82 mm

Length:

15.87 mm

Transistor Type:

1 N-Channel

Type:

MOSFET

Width:

4.82 mm

Brand:

ON Semiconductor / Fairchild

Fall Time:

25 ns

Product Type:

MOSFET

Rise Time:

60 ns

Factory Pack Quantity:

150

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

20 ns

Typical Turn-On Delay Time:

15 ns

Part # Aliases:

HUF75339G3_NL

Unit Weight:

1.340411 oz

Tags

HUF75339, HUF7533, HUF753, HUF75, HUF7, HUF