IXTH30N50P

IXTH30N50P
Mfr. #:
IXTH30N50P
メーカー:
Littelfuse
説明:
MOSFET 30.0 Amps 500 V 0.2 Ohm Rds
ライフサイクル:
メーカー新製品
データシート:
IXTH30N50P データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTH30N50P DatasheetIXTH30N50P Datasheet (P4-P5)
ECAD Model:
製品属性
属性値
メーカー:
IXYS
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-247-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
500 V
Id-連続ドレイン電流:
30 A
Rds On-ドレイン-ソース抵抗:
165 mOhms
Vgs th-ゲート-ソースしきい値電圧:
5 V
Vgs-ゲート-ソース間電圧:
30 V
Qg-ゲートチャージ:
70 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
460 W
構成:
独身
チャネルモード:
強化
商標名:
PolarHV
包装:
チューブ
高さ:
21.46 mm
長さ:
16.26 mm
シリーズ:
IXTH30N50
トランジスタタイプ:
1 N-Channel
タイプ:
PolarHVパワーMOSFET
幅:
5.3 mm
ブランド:
IXYS
フォワード相互コンダクタンス-最小:
17 S
立ち下がり時間:
21 ns
製品タイプ:
MOSFET
立ち上がり時間:
27 ns
ファクトリーパックの数量:
30
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
75 ns
典型的なターンオン遅延時間:
25 ns
単位重量:
0.229281 oz
Tags
IXTH30N5, IXTH30N, IXTH30, IXTH3, IXTH, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***inecomponents.com
Trans MOSFET N-CH 500V 30A 3-Pin (3+Tab) TO-247AD
***i-Key
MOSFET N-CH 500V 30A TO247
***el Nordic
Contact for details
***p One Stop Global
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247 Tube
***i-Key
MOSFET N-CH 600V 25A TO247
***S
French Electronic Distributor since 1988
***el Electronic
IC SUPERVISOR
***icroelectronics
N-channel 600 V, 0.145 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
***ure Electronics
N-Channel 600 V 0.175 Ohm Flange Mount Power Mosfet - TO-247
***r Electronics
Power Field-Effect Transistor, 21A I(D), 600V, 0.175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***emi
N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 22 A, 170 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 22A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
***ical
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247 Magazine
***
POWER MOSFET TRANSISTOR
***i-Key
MOSFET N-CH 600V 25A TO247
***emi
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650 V, 24 A, 150 mΩ, TO-247
*** Stop Electro
Power Field-Effect Transistor, 24A I(D), N-Channel, Metal-oxide Semiconductor FET
***nell
SUPERFET2 650V, 150 MOHM, FRFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.133ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Powe
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
***emi
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 600 V, 37 A, 104 mΩ, TO-247
***roFlash
Power Field-Effect Transistor, 37A I(D), 600V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***nell
SUPERFET2 104MOHM, FRFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 37A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.098ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissi
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
モデル メーカー 説明 ストック 価格
IXTH30N50P
DISTI # IXTH30N50P-ND
IXYS CorporationMOSFET N-CH 500V 30A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$5.6377
IXTH30N50P
DISTI # 747-IXTH30N50P
IXYS CorporationMOSFET 30.0 Amps 500 V 0.2 Ohm Rds
RoHS: Compliant
0
  • 1:$8.0400
  • 10:$7.1900
  • 25:$6.2500
  • 50:$6.1300
  • 100:$5.8900
  • 250:$5.0300
  • 500:$4.7700
  • 1000:$4.0300
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可用性
ストック:
100
注文中:
2083
数量を入力してください:
IXTH30N50Pの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$8.04
$8.04
10
$7.19
$71.90
25
$6.25
$156.25
50
$6.13
$306.50
100
$5.89
$589.00
250
$5.03
$1 257.50
500
$4.77
$2 385.00
1000
$4.03
$4 030.00
2500
$3.45
$8 625.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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