SSM6N35AFU,LF

Product Attribute

Attribute Value

Manufacturer:

Toshiba

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-363-6

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

250 mA

Rds On - Drain-Source Resistance:

750 mOhms, 750 mOhms

Vgs th - Gate-Source Threshold Voltage:

350 mV

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

340 pC, 340 pC

Minimum Operating Temperature:

-

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

285 mW

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Series:

SSM6N35AFU

Transistor Type:

2 N-Channel

Brand:

Toshiba

Forward Transconductance - Min:

0.5 S, 0.5 S

Fall Time:

5.5 ns, 5.5 ns

Product Type:

MOSFET

Rise Time:

2 ns, 2 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

6.5 ns, 6.5 ns

Typical Turn-On Delay Time:

2 ns, 2 ns

Unit Weight:

0.000212 oz

Tags

SSM6N35AFU, SSM6N35A, SSM6N35, SSM6N3, SSM6N, SSM6, SSM