IRF6611TR1

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

N

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

DirectFET-MX

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

27 A

Rds On - Drain-Source Resistance:

2.6 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 40 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

3.9 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

0.7 mm

Length:

6.35 mm

Transistor Type:

1 N-Channel

Type:

DirectFET Power MOSFET

Width:

5.05 mm

Brand:

Infineon / IR

Fall Time:

6.5 ns

Moisture Sensitive:

Yes

Product Type:

MOSFET

Rise Time:

57 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

24 ns

Typical Turn-On Delay Time:

18 ns

Part # Aliases:

SP001526886

Unit Weight:

0.017637 oz

Tags

IRF6611T, IRF6611, IRF661, IRF66, IRF6, IRF