FDB6030L

FDB6030L
Mfr. #:
FDB6030L
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET N-Channel PowerTrench
Lifecycle:
New from this manufacturer.
Datasheet:
FDB6030L Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
48 A
Rds On - Drain-Source Resistance:
13 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 65 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
52 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
4.83 mm
Length:
10.67 mm
Series:
FDB6030L
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
9.65 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
37 S
Fall Time:
12 ns
Product Type:
MOSFET
Rise Time:
12 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
29 ns
Typical Turn-On Delay Time:
11 ns
Part # Aliases:
FDB6030L_NL
Unit Weight:
0.046296 oz
Tags
FDB6030L, FDB6030, FDB603, FDB60, FDB6, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***pOneStopGlobal
TransMOSFETNCH30V48A3Pin2TabD2PAKTR
***nell
TRANSISTORMOSFET;TransistorTypeMOSFET;TransistorPolarityNChannel;VoltageVdsTyp30V;CurrentIdCont48A;OnStateResistance0013ohm;VoltageVgsRdsonMeasurement10V;VoltageVgsthTyp19V;CaseStyleTO220;TerminationTypeSMD;OperatingTemperatureRange65Cto175C;TransistorCaseStyleTO220
***rchildSemiconductor
ThisNChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDCDCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollersTheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDSONspecificationsTheresultisaMOSFETthatiseasyandsafertodriveevenatveryhighfrequenciesandDCDCpowersupplydesignswithhigheroverallefficiencyIthasbeenoptimizedforlowgatechargelowRDSONandfastswitchingspeed
Part # Mfg. Description Stock Price
FDB6030L
DISTI # FDB6030L-ND
ON SemiconductorMOSFET N-CH 30V 48A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
Limited Supply - Call
    FDB6030L
    DISTI # 512-FDB6030L
    ON SemiconductorMOSFET N-Channel PowerTrench
    RoHS: Compliant
    0
      FDB6030LFairchild Semiconductor CorporationPower Field-Effect Transistor, 52A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant
      22487
      • 1000:$0.4900
      • 500:$0.5100
      • 100:$0.5300
      • 25:$0.5600
      • 1:$0.6000
      FDB6030LFairchild Semiconductor CorporationMOSFET Transistor, N-Channel, TO-263AB1416
      • 387:$0.4625
      • 69:$0.5180
      • 1:$1.4800
      FDB6030LNational Semiconductor CorporationMOSFET Transistor, N-Channel, TO-263AB5
      • 4:$1.1100
      • 1:$1.4800
      Image Part # Description
      FDB6030BLFSC

      Mfr.#: FDB6030BLFSC

      OMO.#: OMO-FDB6030BLFSC-1190

      New and Original
      FDB6030L-NL

      Mfr.#: FDB6030L-NL

      OMO.#: OMO-FDB6030L-NL-1190

      New and Original
      FDB6035AL-A

      Mfr.#: FDB6035AL-A

      OMO.#: OMO-FDB6035AL-A-1190

      New and Original
      FDB6035L

      Mfr.#: FDB6035L

      OMO.#: OMO-FDB6035L-1190

      Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      FDB6644

      Mfr.#: FDB6644

      OMO.#: OMO-FDB6644-1190

      50 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
      FDB6670A

      Mfr.#: FDB6670A

      OMO.#: OMO-FDB6670A-1190

      New and Original
      FDB6670AL.

      Mfr.#: FDB6670AL.

      OMO.#: OMO-FDB6670AL--1190

      New and Original
      FDB6670ALFSC

      Mfr.#: FDB6670ALFSC

      OMO.#: OMO-FDB6670ALFSC-1190

      New and Original
      FDB6670AS-NL

      Mfr.#: FDB6670AS-NL

      OMO.#: OMO-FDB6670AS-NL-1190

      New and Original
      FDB6676_M

      Mfr.#: FDB6676_M

      OMO.#: OMO-FDB6676-M-1190

      New and Original
      Availability
      Stock:
      Available
      On Order:
      2000
      Enter Quantity:
      Current price of FDB6030L is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
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