MJD350-13

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

SMD/SMT

Package / Case:

DPAK-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

300 V

Collector- Base Voltage VCBO:

300 V

Emitter- Base Voltage VEBO:

3 V

Maximum DC Collector Current:

0.5 A

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

MJD350

DC Current Gain hFE Max:

30 at 50 mA, 10 V

Height:

2.4 mm

Length:

6.8 mm

Packaging:

Reel

Width:

6.2 mm

Brand:

Diodes Incorporated

DC Collector/Base Gain hfe Min:

30

Pd - Power Dissipation:

1560 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

2500

Subcategory:

Transistors

Unit Weight:

0.009185 oz

Tags

MJD35, MJD3, MJD