IPP051N15N5AKSA1

Mfr. #:: IPP051N15N5AKSA1
Manufacturer:: Infineon Technologies
Description:: MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: IPP051N15N5AKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IPP051N15N5AKSA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: PG-TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 150 V

Id - Continuous Drain Current:: 120 A

Rds On - Drain-Source Resistance:: 5.1 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 80 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 300 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Series:: OptiMOS 5

Transistor Type:: 1 N-Channel

Width:: 4.4 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 59 S

Fall Time:: 37 ns

Product Type:: MOSFET

Rise Time:: 5.3 ns

Factory Pack Quantity:: 500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 4.5 ns

Typical Turn-On Delay Time:: 19.6 ns

Part # Aliases:: IPP051N15N5 SP001279600

Unit Weight:: 0.063493 oz

Tags: IPP051, IPP05, IPP0, IPP

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

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IPP051N15N5AKSA1 Description

***ure Electronics: N-Channel 150 V 5.1 mOhm Flange Mount OptiMOSª5 Power Mosfet - TO-220

***ical: OptiMOS 5 Power-Transistor,150V

***ronik: N-CH 150V 120A 5,1mOhm TO-220-3

***et: MOS Power Transistors LV (< 200V)

***ark: Mosfet, N-Ch, 150V, 120A, To-220-3; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:150V; On Resistance Rds(On):0.004Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.8V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 150V, 120A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.004ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.8V; Power Dissipation Pd:300W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CA-N, 150V, 120A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:150V; Resistenza di Attivazione Rds(on):0.004ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.8V; Dissipazione di Potenza Pd:300W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: The new OptiMOS 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness. | Summary of Features: Lower R DS(on) without compromising FOM gd and FOM oss; Lower output charge; Ultra-low reverse recovery charge; Increased commutation ruggedness; Higher switching frequency possible | Benefits: Reduced paralleling; Size reduction enabled with SuperSO8 best-in-class; Higher power density designs; More rugged products; System cost reduction; Improved EMI behavior | Target Applications: Low voltage drives; Telecom; Solar

IPP051N15N5AKSA1 More Information

Light Electric Vehicles (LEV): Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.

Market price

Part #	Mfg.	Description	Stock	Price
IPP051N15N5AKSA1 DISTI # V99:2348_16140311	Infineon Technologies AG	OptiMOS 5 Power-Transistor,150V RoHS: Compliant	350	2500:$4.0199 1000:$4.1300 500:$4.4620 250:$4.9429 100:$5.2240 25:$6.0679 10:$6.4340 1:$7.9024
IPP051N15N5AKSA1 DISTI # V36:1790_16140311	Infineon Technologies AG	OptiMOS 5 Power-Transistor,150V RoHS: Compliant	0	500000:$3.6810 250000:$3.6870 50000:$4.6980 5000:$6.8440 500:$7.2240
IPP051N15N5AKSA1 DISTI # IPP051N15N5AKSA1-ND	Infineon Technologies AG	MV POWER MOS RoHS: Compliant Min Qty: 1 Container: Tube	460In Stock	2500:$3.4544 500:$4.1187 100:$4.7299 25:$5.4472 10:$5.7130 1:$6.3200
IPP051N15N5AKSA1 DISTI # 33695947	Infineon Technologies AG	OptiMOS 5 Power-Transistor,150V RoHS: Compliant	350	2:$7.9024
IPP051N15N5AKSA1 DISTI # IPP051N15N5	Infineon Technologies AG	MOS Power Transistors LV (< 200V) (Alt: IPP051N15N5) RoHS: Compliant Min Qty: 500	Asia - 2500	25000:$3.6677 12500:$3.7216 5000:$3.7772 2500:$3.8344 1500:$3.9542 1000:$4.0818 500:$4.2178
IPP051N15N5AKSA1 DISTI # IPP051N15N5AKSA1	Infineon Technologies AG	MOS Power Transistors LV (< 200V) - Rail/Tube (Alt: IPP051N15N5AKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	3000:$3.1900 5000:$3.1900 2000:$3.2900 1000:$3.4900 500:$3.5900
IPP051N15N5AKSA1 DISTI # SP001279600	Infineon Technologies AG	MOS Power Transistors LV (< 200V) (Alt: SP001279600) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€2.6900 500:€2.8900 100:€2.9900 50:€3.0900 25:€3.2900 10:€3.3900 1:€3.6900
IPP051N15N5AKSA1 DISTI # 43AC3275	Infineon Technologies AG	MOSFET, N-CH, 150V, 120A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.8V,Power RoHS Compliant: Yes	1190	500:$3.9600 250:$4.3400 100:$4.5500 50:$4.8900 25:$5.2300 10:$5.4900 1:$6.0800
IPP051N15N5AKSA1 DISTI # 726-IPP051N15N5AKSA1	Infineon Technologies AG	MOSFET RoHS: Compliant	2968	1:$6.0200 10:$5.4400 25:$5.1800 100:$4.5000 250:$4.3000 500:$3.9200 1000:$3.4100
IPP051N15N5AKSA1 DISTI # 2803399	Infineon Technologies AG	MOSFET, N-CH, 150V, 120A, TO-220-3	1175	100:£4.0400 10:£4.6500 1:£5.9800
IPP051N15N5AKSA1 DISTI # 2803399	Infineon Technologies AG	MOSFET, N-CH, 150V, 120A, TO-220-3 RoHS: Compliant	1190	100:$6.5100 10:$7.3700 1:$7.8800

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Availability

Stock:: Available
On Order:: 1985
Enter Quantity:

Current price of IPP051N15N5AKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$6.02~~; ~~$6.02~~

10: ~~$5.44~~; ~~$54.40~~

25: ~~$5.18~~; ~~$129.50~~

100: ~~$4.50~~; ~~$450.00~~

250: ~~$4.30~~; ~~$1 075.00~~

500: ~~$3.92~~; ~~$1 960.00~~

1000: ~~$3.41~~; ~~$3 410.00~~

2500: ~~$3.29~~; ~~$8 225.00~~

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IPP051N15N5AKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes