IPP65R065C7XKSA1

IPP65R065C7XKSA1
Mfr. #:
IPP65R065C7XKSA1
メーカー:
Infineon Technologies
説明:
MOSFET HIGH POWER_NEW
ライフサイクル:
メーカー新製品
データシート:
IPP65R065C7XKSA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
IPP65R065C7XKSA1 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-220-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
650 V
Id-連続ドレイン電流:
33 A
Rds On-ドレイン-ソース抵抗:
65 mOhms
Vgs th-ゲート-ソースしきい値電圧:
3 V
Vgs-ゲート-ソース間電圧:
20 V
Qg-ゲートチャージ:
64 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
171 W
構成:
独身
チャネルモード:
強化
商標名:
CoolMOS
包装:
チューブ
高さ:
15.65 mm
長さ:
10 mm
シリーズ:
CoolMOS C7
トランジスタタイプ:
1 N-Channel
幅:
4.4 mm
ブランド:
インフィニオンテクノロジーズ
立ち下がり時間:
7 ns
製品タイプ:
MOSFET
立ち上がり時間:
14 ns
ファクトリーパックの数量:
500
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
72 ns
典型的なターンオン遅延時間:
17 ns
パーツ番号エイリアス:
IPP65R065C7 SP001080100
単位重量:
0.211644 oz
Tags
IPP65R0, IPP65, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Trans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-220 Tube
***ical
Trans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-220
***et Europe
Trans MOSFET N-CH 700V 33A 3-Pin TO-220 Tube
***i-Key
MOSFET N-CH 650V TO-220-3
***ukat
N-Ch 650V 33A 171W 0,065R TO220
***ark
Mosfet, N-Ch, 650V, 33A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.058Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 33A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:171W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS C7 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 650V, 33A, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:33A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.058ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:171W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS C7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
モデル メーカー 説明 ストック 価格
IPP65R065C7XKSA1
DISTI # 32688962
Infineon Technologies AGTrans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-220 Tube489
  • 3:$3.8557
IPP65R065C7XKSA1
DISTI # IPP65R065C7XKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V TO-220-3
RoHS: Compliant
Min Qty: 500
Container: Tube
Temporarily Out of Stock
  • 500:$5.0101
IPP65R065C7XKSA1
DISTI # V36:1790_06378598
Infineon Technologies AGTrans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-220 Tube0
  • 500000:$3.7310
  • 250000:$3.7350
  • 50000:$4.1300
  • 5000:$4.8820
  • 500:$5.0100
IPP65R065C7XKSA1
DISTI # SP001080100
Infineon Technologies AGTrans MOSFET N-CH 700V 33A 3-Pin TO-220 Tube (Alt: SP001080100)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 400
  • 1000:€3.3900
  • 500:€3.5900
  • 100:€3.6900
  • 50:€3.8900
  • 25:€4.0900
  • 10:€4.1900
  • 1:€4.5900
IPP65R065C7XKSA1
DISTI # IPP65R065C7XKSA1
Infineon Technologies AGTrans MOSFET N-CH 700V 33A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R065C7XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 3000:$3.8900
  • 5000:$3.8900
  • 2000:$4.0900
  • 1000:$4.1900
  • 500:$4.3900
IPP65R065C7
DISTI # 726-IPP65R065C7
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
0
  • 1:$7.3200
  • 10:$6.6100
  • 25:$6.3100
  • 100:$5.4800
  • 250:$5.2300
  • 500:$4.7700
IPP65R065C7XKSA1
DISTI # 726-IPP65R065C7XKSA1
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
0
  • 1:$7.3200
  • 10:$6.6100
  • 25:$6.3100
  • 100:$5.4800
  • 250:$5.2300
  • 500:$4.7700
IPP65R065C7XKSA1
DISTI # IPP65R065C7
Infineon Technologies AGN-Ch 650V 33A 171W 0,065R TO220
RoHS: Compliant
0
  • 1:€10.6000
  • 10:€6.6000
  • 50:€4.6000
  • 100:€4.2200
IPP65R065C7XKSA1
DISTI # 2839470
Infineon Technologies AGMOSFET, N-CH, 650V, 33A, TO-2200
  • 100:£4.1900
  • 50:£4.5000
  • 10:£4.8100
  • 5:£5.5800
  • 1:£6.1000
IPP65R065C7XKSA1
DISTI # 2839470
Infineon Technologies AGMOSFET, N-CH, 650V, 33A, TO-220
RoHS: Compliant
0
  • 250:$6.1600
  • 100:$6.2800
  • 50:$6.6300
  • 10:$7.0100
  • 5:$7.9200
  • 1:$8.4800
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OMO.#: OMO-381LX471M450A052

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Mfr.#: CFM-4010V-185-314-20

OMO.#: OMO-CFM-4010V-185-314-20

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381LX471M450A052

Mfr.#: 381LX471M450A052

OMO.#: OMO-381LX471M450A052-CORNELL-DUBILIER-ELECTRONICS

Aluminum Electrolytic Capacitors - Snap In SNAP-IN 470uF450V
LM2931AD-5.0R2G

Mfr.#: LM2931AD-5.0R2G

OMO.#: OMO-LM2931AD-5-0R2G-ON-SEMICONDUCTOR

LDO Voltage Regulators 5V 100mA w/Load Dump
可用性
ストック:
Available
注文中:
3000
数量を入力してください:
IPP65R065C7XKSA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$7.32
$7.32
10
$6.61
$66.10
25
$6.31
$157.75
100
$5.48
$548.00
250
$5.23
$1 307.50
500
$4.77
$2 385.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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